APTM50AM24SG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

1.25kW

JESD-609 Code :

e1

Turn On Delay Time :

10 ns

Fall Time (Typ) :

41 ns

Pbfree Code :

yes

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

DS Breakdown Voltage-Min :

500V

Number of Pins :

7

Drain to Source Voltage (Vdss) :

500V

Mounting Type :

Chassis Mount

Gate to Source Voltage (Vgs) :

30V

Number of Elements :

2

Power - Max :

1250W

Turn-Off Delay Time :

50 ns

RoHS Status :

RoHS Compliant

FET Feature :

Standard

Gate Charge (Qg) (Max) @ Vgs :

434nC @ 10V

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Avalanche Energy Rating (Eas) :

1300 mJ

Rds On (Max) @ Id, Vgs :

28m Ω @ 75A, 10V

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 6mA

Factory Lead Time :

16 Weeks

Rise Time :

17ns

Lead Free :

Lead Free

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.25kW

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

Package / Case :

SP6

Continuous Drain Current (ID) :

150A

Pulsed Drain Current-Max (IDM) :

600A

Number of Terminations :

7

Radiation Hardening :

No

Published :

1999

Mount :

Chassis Mount, Screw

FET Type :

2 N-Channel (Half Bridge)

Input Capacitance (Ciss) (Max) @ Vds :

19600pF @ 25V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-40°C~150°C TJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)