APTM20TAM16FPG
- Mfr.Part #
- APTM20TAM16FPG
- Manufacturer
- Microchip Technology
- Package / Case
- SP6
- Datasheet
- Download
- Description
- MOSFET 6N-CH 200V 104A SP6-P
- Stock
- 1,215
- In Stock :
- 1,215
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- Manufacturer :
- Microchip Technology
- Product Category :
- Transistors - FETs, MOSFETs - Arrays
- Published :
- 2012
- FET Technology :
- METAL-OXIDE SEMICONDUCTOR
- FET Feature :
- Standard
- Number of Pins :
- 6
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 36 Weeks
- Terminal Position :
- UPPER
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Operating Temperature :
- -40°C~150°C TJ
- Packaging :
- Bulk
- Package / Case :
- SP6
- Pbfree Code :
- yes
- RoHS Status :
- RoHS Compliant
- Terminal Form :
- UNSPECIFIED
- ECCN Code :
- EAR99
- Drain-source On Resistance-Max :
- 0.019Ohm
- Rise Time :
- 64ns
- Radiation Hardening :
- No
- Turn-Off Delay Time :
- 88 ns
- Additional Feature :
- AVALANCHE RATED
- DS Breakdown Voltage-Min :
- 200V
- Rds On (Max) @ Id, Vgs :
- 19m Ω @ 52A, 10V
- Avalanche Energy Rating (Eas) :
- 3000 mJ
- Case Connection :
- Isolated
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- JESD-30 Code :
- R-XUFM-X21
- Input Capacitance (Ciss) (Max) @ Vds :
- 7220pF @ 25V
- Max Power Dissipation :
- 390W
- Turn On Delay Time :
- 32 ns
- Fall Time (Typ) :
- 116 ns
- Continuous Drain Current (ID) :
- 104A
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Element Material :
- SILICON
- Vgs(th) (Max) @ Id :
- 5V @ 2.5mA
- Drain to Source Voltage (Vdss) :
- 200V
- Number of Terminations :
- 21
- Configuration :
- 3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
- Power Dissipation :
- 390W
- Pin Count :
- 21
- Number of Elements :
- 6
- Mount :
- Chassis Mount, Screw
- FET Type :
- 6 N-Channel (3-Phase Bridge)
- Mounting Type :
- Chassis Mount
- Datasheets
- APTM20TAM16FPG

APTM20TAM16FPG datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Microsemi Corporation stock available at
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