APTM20HM20FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Avalanche Energy Rating (Eas) :

2500 mJ

Fall Time (Typ) :

99 ns

Turn-Off Delay Time :

81 ns

Drain to Source Voltage (Vdss) :

200V

RoHS Status :

RoHS Compliant

Packaging :

Bulk

Package / Case :

SP4

Operating Temperature :

-40°C~150°C TJ

Radiation Hardening :

No

FET Type :

4 N-Channel (H-Bridge)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Continuous Drain Current (ID) :

89A

Turn On Delay Time :

28 ns

Mount :

Chassis Mount, Screw

Gate Charge (Qg) (Max) @ Vgs :

112nC @ 10V

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e1

Max Power Dissipation :

357W

Number of Pins :

4

Case Connection :

Isolated

Input Capacitance (Ciss) (Max) @ Vds :

6850pF @ 25V

Rise Time :

56ns

Rds On (Max) @ Id, Vgs :

24m Ω @ 44.5A, 10V

Power Dissipation :

357W

Pbfree Code :

yes

Pulsed Drain Current-Max (IDM) :

356A

Terminal Finish :

TIN SILVER COPPER

Factory Lead Time :

36 Weeks

Transistor Element Material :

SILICON

Mounting Type :

Chassis Mount

Number of Elements :

4

ECCN Code :

EAR99

Additional Feature :

AVALANCHE RATED

Published :

2014

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Mode :

ENHANCEMENT MODE

Gate to Source Voltage (Vgs) :

30V

Terminal Position :

UPPER

Number of Terminations :

14

FET Feature :

Standard

Pin Count :

14

Terminal Form :

UNSPECIFIED