APTM20HM10FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Power Dissipation :

694W

Number of Pins :

6

Pulsed Drain Current-Max (IDM) :

700A

JESD-30 Code :

R-XUFM-X12

Pbfree Code :

yes

ECCN Code :

EAR99

Rise Time :

56ns

Terminal Position :

UPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Fall Time (Typ) :

99 ns

Gate to Source Voltage (Vgs) :

30V

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

28 ns

Operating Temperature :

-40°C~150°C TJ

FET Type :

4 N-Channel (H-Bridge)

Package / Case :

SP6

Case Connection :

Isolated

Turn-Off Delay Time :

81 ns

Continuous Drain Current (ID) :

175A

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard

RoHS Status :

RoHS Compliant

Published :

2012

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Radiation Hardening :

No

Additional Feature :

AVALANCHE RATED

Max Power Dissipation :

694W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Mode :

ENHANCEMENT MODE

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Mount :

Chassis Mount, Screw

Vgs(th) (Max) @ Id :

5V @ 5mA

Pin Count :

12

Drain-source On Resistance-Max :

0.012Ohm

DS Breakdown Voltage-Min :

200V

JESD-609 Code :

e1

Mounting Type :

Chassis Mount

Number of Elements :

4

Avalanche Energy Rating (Eas) :

2500 mJ

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Number of Terminations :

12

Transistor Element Material :

SILICON