APTM20HM08FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Vgs(th) (Max) @ Id :

5V @ 5mA

Packaging :

Bulk

JESD-30 Code :

R-XUFM-X12

Drain to Source Voltage (Vdss) :

200V

Operating Mode :

ENHANCEMENT MODE

Terminal Form :

UNSPECIFIED

Turn On Delay Time :

32 ns

Factory Lead Time :

36 Weeks

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Number of Elements :

4

Package / Case :

SP6

Transistor Application :

SWITCHING

Case Connection :

Isolated

Max Power Dissipation :

781W

Mount :

Chassis Mount, Screw

Qualification Status :

Not Qualified

Published :

2006

Number of Pins :

6

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Power Dissipation :

781W

Additional Feature :

AVALANCHE RATED

Rise Time :

64ns

JESD-609 Code :

e1

Gate to Source Voltage (Vgs) :

30V

Continuous Drain Current (ID) :

208A

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Rds On (Max) @ Id, Vgs :

10m Ω @ 104A, 10V

Mounting Type :

Chassis Mount

FET Feature :

Standard

Avalanche Energy Rating (Eas) :

3000 mJ

Pin Count :

12

Terminal Position :

UPPER

Pbfree Code :

yes

Number of Terminations :

12

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Pulsed Drain Current-Max (IDM) :

832A

Operating Temperature :

-40°C~150°C TJ

Turn-Off Delay Time :

88 ns

Terminal Finish :

TIN SILVER COPPER

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

FET Type :

4 N-Channel (H-Bridge)

DS Breakdown Voltage-Min :

200V

Fall Time (Typ) :

116 ns

Drain-source On Resistance-Max :

0.01Ohm