APTM20DHM10G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

8

FET Type :

2 N-Channel (Dual) Asymmetrical

Additional Feature :

AVALANCHE RATED, ULTRA-LOW RESISTANCE

RoHS Status :

RoHS Compliant

Published :

2016

Packaging :

Bulk

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Rds On (Max) @ Id, Vgs :

12m Ω @ 87.5A, 10V

Power Dissipation :

694W

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Max Power Dissipation :

694W

Package / Case :

SP6

ECCN Code :

EAR99

Vgs(th) (Max) @ Id :

5V @ 5mA

Operating Temperature :

-40°C~150°C TJ

Transistor Application :

SWITCHING

Pulsed Drain Current-Max (IDM) :

700A

Mount :

Chassis Mount, Screw

Number of Terminations :

8

Number of Pins :

6

Qualification Status :

Not Qualified

Input Capacitance (Ciss) (Max) @ Vds :

13700pF @ 25V

Mounting Type :

Chassis Mount

Reach Compliance Code :

Unknown

Number of Elements :

2

FET Feature :

Standard

Drain to Source Voltage (Vdss) :

200V

Terminal Form :

UNSPECIFIED

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Operating Mode :

ENHANCEMENT MODE

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Gate Charge (Qg) (Max) @ Vgs :

224nC @ 10V

Transistor Element Material :

SILICON

Terminal Position :

UPPER

Gate to Source Voltage (Vgs) :

30V

JESD-609 Code :

e1

JESD-30 Code :

R-XUFM-X8

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

175A