APTM20DHM08G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Number of Elements :

2

Transistor Element Material :

SILICON

Continuous Drain Current (ID) :

208A

Mounting Type :

Chassis Mount

JESD-30 Code :

R-XUFM-X8

Terminal Form :

UNSPECIFIED

Rise Time :

64ns

Max Power Dissipation :

781W

Additional Feature :

AVALANCHE RATED

Power Dissipation :

781W

Pin Count :

8

Terminal Finish :

TIN SILVER COPPER

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Case Connection :

Isolated

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Terminations :

8

Transistor Application :

SWITCHING

RoHS Status :

RoHS Compliant

Rds On (Max) @ Id, Vgs :

10m Ω @ 104A, 10V

Terminal Position :

UPPER

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

30V

Fall Time (Typ) :

116 ns

JESD-609 Code :

e1

ECCN Code :

EAR99

Turn On Delay Time :

32 ns

Pbfree Code :

yes

Mount :

Chassis Mount, Screw

FET Type :

2 N-Channel (Dual) Asymmetrical

Number of Pins :

6

Radiation Hardening :

No

Turn-Off Delay Time :

88 ns

Vgs(th) (Max) @ Id :

5V @ 5mA

Operating Temperature :

-40°C~150°C TJ

Package / Case :

SP6

Factory Lead Time :

22 Weeks

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Packaging :

Bulk

Published :

2012

Drain-source On Resistance-Max :

0.01Ohm