APTM20AM08FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Turn-Off Delay Time :

88 ns

Avalanche Energy Rating (Eas) :

3000 mJ

Input Capacitance (Ciss) (Max) @ Vds :

14400pF @ 25V

Mount :

Chassis Mount, Screw

Radiation Hardening :

No

Pbfree Code :

yes

Terminal Form :

UNSPECIFIED

Transistor Application :

SWITCHING

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

200V

Power Dissipation :

781W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

JESD-609 Code :

e1

ECCN Code :

EAR99

Published :

2012

Number of Terminations :

12

Pin Count :

12

Packaging :

Bulk

Rds On (Max) @ Id, Vgs :

10m Ω @ 104A, 10V

Gate to Source Voltage (Vgs) :

30V

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

208A

Drain-source On Resistance-Max :

0.01Ohm

Package / Case :

SP4

Operating Temperature :

-40°C~150°C TJ

Case Connection :

Isolated

FET Type :

2 N-Channel (Half Bridge)

Turn On Delay Time :

32 ns

FET Feature :

Standard

Additional Feature :

AVALANCHE RATED

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

781W

Fall Time (Typ) :

116 ns

Vgs(th) (Max) @ Id :

5V @ 5mA

Mounting Type :

Chassis Mount

Gate Charge (Qg) (Max) @ Vgs :

280nC @ 10V

Rise Time :

64ns

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Number of Pins :

4

Number of Elements :

2