APTM20AM04FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Channels :

1

Number of Pins :

6

Vgs(th) (Max) @ Id :

5V @ 10mA

Power - Max :

1250W

Number of Elements :

2

Fall Time (Typ) :

116 ns

Element Configuration :

Single

Package / Case :

SP6

Power Dissipation :

1.25kW

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Published :

2006

Drain-source On Resistance-Max :

0.005ohm

Gate to Source Voltage (Vgs) :

30V

Mount :

Chassis Mount, Screw

Rise Time :

64ns

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Max Power Dissipation :

1.25kW

Transistor Application :

SWITCHING

Avalanche Energy Rating (Eas) :

3000 mJ

Length :

108mm

Mounting Type :

Chassis Mount

Pin Count :

7

Terminal Form :

UNSPECIFIED

Case Connection :

Isolated

ECCN Code :

EAR99

Lead Free :

Lead Free

Turn On Delay Time :

32 ns

JESD-30 Code :

R-XUFM-X7

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

62mm

Number of Terminations :

7

Packaging :

Bulk

Height :

21.9mm

FET Technology :

METAL-OXIDE SEMICONDUCTOR

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Turn-Off Delay Time :

88 ns

Input Capacitance (Ciss) (Max) @ Vds :

28900pF @ 25V

Continuous Drain Current (ID) :

372A

Pbfree Code :

yes

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ

Terminal Finish :

TIN SILVER COPPER

Rds On (Max) @ Id, Vgs :

5m Ω @ 186A, 10V

Transistor Element Material :

SILICON

RoHS Status :

RoHS Compliant

Drain to Source Voltage (Vdss) :

200V

FET Feature :

Standard