APTM20AM04FG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Pin Count :

7

Number of Terminations :

7

Power - Max :

1250W

FET Type :

2 N-Channel (Half Bridge)

Fall Time (Typ) :

116 ns

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

32 ns

Element Configuration :

Single

Height :

21.9mm

Vgs(th) (Max) @ Id :

5V @ 10mA

Lead Free :

Lead Free

Terminal Form :

UNSPECIFIED

Package / Case :

SP6

Drain to Source Voltage (Vdss) :

200V

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

28900pF @ 25V

Gate Charge (Qg) (Max) @ Vgs :

560nC @ 10V

Avalanche Energy Rating (Eas) :

3000 mJ

Length :

108mm

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Published :

2006

Max Power Dissipation :

1.25kW

RoHS Status :

RoHS Compliant

Gate to Source Voltage (Vgs) :

30V

Rise Time :

64ns

Transistor Element Material :

SILICON

ECCN Code :

EAR99

JESD-30 Code :

R-XUFM-X7

JESD-609 Code :

e1

Additional Feature :

AVALANCHE RATED

Number of Pins :

6

Width :

62mm

Turn-Off Delay Time :

88 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Power Dissipation :

1.25kW

Terminal Finish :

TIN SILVER COPPER

Radiation Hardening :

No

Pbfree Code :

yes

Mounting Type :

Chassis Mount

Terminal Position :

UPPER

Factory Lead Time :

36 Weeks

Rds On (Max) @ Id, Vgs :

5m Ω @ 186A, 10V

Operating Temperature :

-40°C~150°C TJ

Number of Channels :

1

Mount :

Chassis Mount, Screw

Case Connection :

Isolated

FET Feature :

Standard

Continuous Drain Current (ID) :

372A

Number of Elements :

2

Packaging :

Bulk

Drain-source On Resistance-Max :

0.005ohm