APTM120A80FT1G

Manufacturer :

Microsemi

Product Category :

Transistors - FETs, MOSFETs - Arrays

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Number of Terminations :

12

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Number of Elements :

2

Package / Case :

SP1

Continuous Drain Current (ID) :

14A

Mount :

Chassis Mount, Screw

Operating Temperature :

-40°C~150°C TJ

RoHS Status :

RoHS Compliant

Max Power Dissipation :

357W

FET Technology :

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code :

e1

Pulsed Drain Current-Max (IDM) :

90A

Gate Charge (Qg) (Max) @ Vgs :

260nC @ 10V

Reach Compliance Code :

Unknown

Drain-source On Resistance-Max :

0.96Ohm

Power Dissipation :

357W

Terminal Position :

UPPER

Operating Mode :

ENHANCEMENT MODE

Qualification Status :

Not Qualified

Terminal Finish :

TIN SILVER COPPER

FET Type :

2 N-Channel (Half Bridge)

Additional Feature :

AVALANCHE RATED

Drain to Source Voltage (Vdss) :

1200V 1.2kV

Pin Count :

12

Packaging :

Bulk

Terminal Form :

UNSPECIFIED

Transistor Element Material :

SILICON

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Gate to Source Voltage (Vgs) :

30V

Input Capacitance (Ciss) (Max) @ Vds :

6696pF @ 25V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

1

FET Feature :

Standard

Case Connection :

Isolated

Rds On (Max) @ Id, Vgs :

960m Ω @ 12A, 10V

Published :

2007

Mounting Type :

Chassis Mount