APTM10TAM19FPG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Gate to Source Voltage (Vgs) :

30V

Published :

2012

JESD-30 Code :

R-XUFM-X21

Power Dissipation :

208W

Rds On (Max) @ Id, Vgs :

21m Ω @ 35A, 10V

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Drain-source On Resistance-Max :

0.021Ohm

Drain to Source Voltage (Vdss) :

100V

Gate Charge (Qg) (Max) @ Vgs :

200nC @ 10V

Transistor Element Material :

SILICON

Turn-Off Delay Time :

95 ns

Package / Case :

SP6

Case Connection :

Isolated

FET Type :

6 N-Channel (3-Phase Bridge)

Avalanche Energy Rating (Eas) :

1500 mJ

Fall Time (Typ) :

125 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Additional Feature :

AVALANCHE RATED

Transistor Application :

SWITCHING

Mounting Type :

Chassis Mount

Mount :

Chassis Mount, Screw

Continuous Drain Current (ID) :

70A

Terminal Finish :

TIN SILVER COPPER

Max Power Dissipation :

208W

FET Feature :

Standard

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pin Count :

21

Operating Temperature :

-40°C~150°C TJ

Terminal Form :

UNSPECIFIED

ECCN Code :

EAR99

Factory Lead Time :

36 Weeks

RoHS Status :

RoHS Compliant

Number of Elements :

6

DS Breakdown Voltage-Min :

100V

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Packaging :

Bulk

Vgs(th) (Max) @ Id :

4V @ 1mA

Rise Time :

70ns

Terminal Position :

UPPER

Number of Pins :

6

Pulsed Drain Current-Max (IDM) :

300A

Turn On Delay Time :

35 ns

Number of Terminations :

21

Pbfree Code :

yes

Configuration :

3 BANKS, SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE