APTM10HM09FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Number of Terminations :

25

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Mounting Type :

Chassis Mount

Terminal Form :

PIN/PEG

Power Dissipation :

390W

Packaging :

Bulk

Rise Time :

70ns

Drain-source On Resistance-Max :

0.01Ohm

Number of Elements :

4

Case Connection :

Isolated

Vgs(th) (Max) @ Id :

4V @ 2.5mA

Terminal Position :

UPPER

RoHS Status :

RoHS Compliant

Input Capacitance (Ciss) (Max) @ Vds :

9875pF @ 25V

JESD-30 Code :

R-XUFM-P25

Package / Case :

SP3

Fall Time (Typ) :

125 ns

Continuous Drain Current (ID) :

139A

Pbfree Code :

yes

Configuration :

COMPLEX

Additional Feature :

AVALANCHE RATED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

ECCN Code :

EAR99

FET Type :

4 N-Channel (H-Bridge)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Factory Lead Time :

36 Weeks

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Turn-Off Delay Time :

95 ns

Transistor Application :

SWITCHING

Number of Pins :

3

Published :

2012

Turn On Delay Time :

35 ns

Operating Temperature :

-40°C~150°C TJ

Pin Count :

25

FET Feature :

Standard

Rds On (Max) @ Id, Vgs :

10m Ω @ 69.5A, 10V

Gate to Source Voltage (Vgs) :

30V

Gate Charge (Qg) (Max) @ Vgs :

350nC @ 10V

Mount :

Chassis Mount, Screw

Max Power Dissipation :

390W

Radiation Hardening :

No