APTM100H45STG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Transistor Application :

SWITCHING

Turn-Off Delay Time :

121 ns

Rise Time :

12ns

Mounting Type :

Chassis Mount

Published :

1999

Additional Feature :

AVALANCHE RATED

Power Dissipation :

357W

FET Type :

4 N-Channel (H-Bridge)

Number of Elements :

4

Factory Lead Time :

36 Weeks

Turn On Delay Time :

10 ns

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Number of Pins :

4

Gate Charge (Qg) (Max) @ Vgs :

154nC @ 10V

Fall Time (Typ) :

35 ns

Avalanche Energy Rating (Eas) :

2500 mJ

Drain to Source Voltage (Vdss) :

1000V 1kV

Rds On (Max) @ Id, Vgs :

540m Ω @ 9A, 10V

ECCN Code :

EAR99

Pbfree Code :

yes

DS Breakdown Voltage-Min :

1000V

Input Capacitance (Ciss) (Max) @ Vds :

4350pF @ 25V

Radiation Hardening :

No

Package / Case :

SP4

RoHS Status :

RoHS Compliant

Number of Terminations :

14

Pin Count :

14

Transistor Element Material :

SILICON

Mount :

Chassis Mount, Screw

FET Feature :

Standard

Gate to Source Voltage (Vgs) :

30V

Pulsed Drain Current-Max (IDM) :

72A

Max Power Dissipation :

357W

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Terminal Position :

UPPER

Terminal Form :

UNSPECIFIED

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Finish :

TIN SILVER COPPER

Case Connection :

Isolated

Packaging :

Bulk

Continuous Drain Current (ID) :

18A

Operating Mode :

ENHANCEMENT MODE

JESD-609 Code :

e1

Operating Temperature :

-40°C~150°C TJ