APTM100H35FTG

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Operating Mode :

ENHANCEMENT MODE

Number of Terminations :

14

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Max Power Dissipation :

390W

JESD-609 Code :

e1

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Operating Temperature :

-40°C~150°C TJ

Power Dissipation :

390W

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

Pin Count :

14

Factory Lead Time :

36 Weeks

Packaging :

Bulk

Published :

2012

DS Breakdown Voltage-Min :

1000V

Additional Feature :

AVALANCHE RATED

Radiation Hardening :

No

Number of Pins :

4

Terminal Position :

UPPER

Mounting Type :

Chassis Mount

Drain to Source Voltage (Vdss) :

1000V 1kV

Rise Time :

12ns

Case Connection :

Isolated

RoHS Status :

RoHS Compliant

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Gate to Source Voltage (Vgs) :

30V

Terminal Finish :

TIN SILVER COPPER

Continuous Drain Current (ID) :

22A

ECCN Code :

EAR99

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Elements :

4

Fall Time (Typ) :

40 ns

Transistor Application :

SWITCHING

Terminal Form :

UNSPECIFIED

Package / Case :

SP4

Pulsed Drain Current-Max (IDM) :

88A

Avalanche Energy Rating (Eas) :

3000 mJ

Mount :

Chassis Mount, Screw

Pbfree Code :

yes

Transistor Element Material :

SILICON

Turn-Off Delay Time :

155 ns

Turn On Delay Time :

18 ns

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

FET Feature :

Standard

FET Type :

4 N-Channel (H-Bridge)