APTM100H35FT3G

Manufacturer :

Microchip Technology

Product Category :

Transistors - FETs, MOSFETs - Arrays

Case Connection :

Isolated

Published :

2012

JESD-609 Code :

e1

Package / Case :

SP3

Turn On Delay Time :

18 ns

Vgs(th) (Max) @ Id :

5V @ 2.5mA

Operating Temperature :

-40°C~150°C TJ

Additional Feature :

AVALANCHE RATED

Continuous Drain Current (ID) :

22A

Turn-Off Delay Time :

155 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Number of Elements :

4

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Terminal Form :

PIN/PEG

Power Dissipation :

390W

Operating Mode :

ENHANCEMENT MODE

FET Type :

4 N-Channel (H-Bridge)

Terminal Position :

UPPER

Number of Terminations :

25

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Number of Pins :

3

Rds On (Max) @ Id, Vgs :

420m Ω @ 11A, 10V

RoHS Status :

RoHS Compliant

Factory Lead Time :

36 Weeks

FET Feature :

Standard

Fall Time (Typ) :

40 ns

Pin Count :

25

Packaging :

Bulk

Terminal Finish :

TIN SILVER COPPER

ECCN Code :

EAR99

Drain to Source Voltage (Vdss) :

1000V 1kV

Transistor Application :

SWITCHING

Pbfree Code :

yes

Radiation Hardening :

No

Max Power Dissipation :

390W

Configuration :

COMPLEX

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Pulsed Drain Current-Max (IDM) :

88A

Mount :

Chassis Mount, Screw

Rise Time :

12ns

Gate to Source Voltage (Vgs) :

30V

DS Breakdown Voltage-Min :

1000V

JESD-30 Code :

R-XUFM-P25

Mounting Type :

Chassis Mount