ZXMN6A09DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Current Rating :

4.4A

Terminal Finish :

MATTE TIN

Input Capacitance (Ciss) (Max) @ Vds :

1407pF @ 40V

Turn-Off Delay Time :

25.3 ns

Lead Free :

Lead Free

Drain to Source Breakdown Voltage :

60V

JESD-609 Code :

e3

Operating Mode :

ENHANCEMENT MODE

Vgs(th) (Max) @ Id :

3V @ 250µA

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Power Dissipation :

1.25W

Weight :

73.992255mg

Pin Count :

8

Max Power Dissipation :

1.25W

Continuous Drain Current (ID) :

4.3A

FET Type :

2 N-Channel (Dual)

Qualification Status :

Not Qualified

Fall Time (Typ) :

5 ns

Peak Reflow Temperature (Cel) :

260

Turn On Delay Time :

4.9 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Mount :

Surface Mount

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Number of Channels :

2

Terminal Form :

Gull wing

Operating Temperature :

-55°C~150°C TJ

FET Feature :

Logic Level Gate

Mounting Type :

Surface Mount

Number of Pins :

8

Number of Elements :

2

Rds On (Max) @ Id, Vgs :

40m Ω @ 8.2A, 10V

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Number of Terminations :

8

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 5V

Drain Current-Max (Abs) (ID) :

3.9A

Drain-source On Resistance-Max :

0.045Ohm

Voltage - Rated DC :

60V

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rise Time :

5ns

RoHS Status :

RoHS Compliant