ZXMN10A11GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate to Source Voltage (Vgs) :

20V

Packaging :

Tape and Reel (TR)

Terminal Position :

Dual

Voltage - Rated DC :

100V

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

1.7A

Drain Current-Max (Abs) (ID) :

1.9A

Number of Terminations :

4

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Current Rating :

1A

Rise Time :

1.7ns

Terminal Finish :

MATTE TIN

Case Connection :

DRAIN

Qualification Status :

Not Qualified

Lead Free :

Lead Free

Fall Time (Typ) :

3.5 ns

Power Dissipation-Max :

2W Ta

JESD-609 Code :

e3

Configuration :

SINGLE WITH BUILT-IN DIODE

RoHS Status :

RoHS Compliant

Published :

2012

JESD-30 Code :

R-PDSO-G4

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Mount :

Surface Mount

Operating Temperature :

-55°C~150°C TJ

Drain-source On Resistance-Max :

0.6Ohm

ECCN Code :

EAR99

Vgs (Max) :

±20V

Number of Elements :

1

Time@Peak Reflow Temperature-Max (s) :

40

Terminal Form :

Gull wing

Peak Reflow Temperature (Cel) :

260

Mounting Type :

Surface Mount

FET Type :

N-Channel

Turn-Off Delay Time :

7.4 ns

Power Dissipation :

3.9W

Drain to Source Breakdown Voltage :

100V

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Package / Case :

TO-261-4, TO-261AA

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V