ZXMN10A11GTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Voltage - Rated DC :

100V

Vgs (Max) :

±20V

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current Rating :

1A

Turn-Off Delay Time :

7.4 ns

Terminal Finish :

MATTE TIN

Drain to Source Breakdown Voltage :

100V

JESD-30 Code :

R-PDSO-G4

Drain-source On Resistance-Max :

0.6Ohm

Mount :

Surface Mount

Transistor Application :

SWITCHING

Operating Mode :

ENHANCEMENT MODE

Packaging :

Tape and Reel (TR)

Gate to Source Voltage (Vgs) :

20V

Transistor Element Material :

SILICON

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Power Dissipation-Max :

2W Ta

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Power Dissipation :

3.9W

Continuous Drain Current (ID) :

1.7A

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

ECCN Code :

EAR99

Time@Peak Reflow Temperature-Max (s) :

40

Qualification Status :

Not Qualified

Configuration :

SINGLE WITH BUILT-IN DIODE

FET Type :

N-Channel

Number of Terminations :

4

Vgs(th) (Max) @ Id :

4V @ 250µA

RoHS Status :

RoHS Compliant

Drain Current-Max (Abs) (ID) :

1.9A

Fall Time (Typ) :

3.5 ns

Peak Reflow Temperature (Cel) :

260

Terminal Position :

Dual

Terminal Form :

Gull wing

Rise Time :

1.7ns

Case Connection :

DRAIN

Published :

2012

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-261-4, TO-261AA

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V