ZXMN10A11KTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Turn-Off Delay Time :

7.4 ns

FET Type :

N-Channel

REACH SVHC :

No SVHC

Drain Current-Max (Abs) (ID) :

2.4A

Pbfree Code :

No

Operating Temperature :

-55°C~150°C TJ

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Gate to Source Voltage (Vgs) :

20V

JESD-30 Code :

R-PSSO-G2

Vgs(th) (Max) @ Id :

4V @ 250µA

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Continuous Drain Current (ID) :

3.5A

Resistance :

350mOhm

Element Configuration :

Single

Mounting Type :

Surface Mount

Mount :

Surface Mount

Number of Terminations :

2

Weight :

3.949996g

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Length :

6.73mm

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Number of Pins :

3

Terminal Form :

Gull wing

RoHS Status :

ROHS3 Compliant

Width :

6.22mm

Peak Reflow Temperature (Cel) :

260

Factory Lead Time :

17 Weeks

ECCN Code :

EAR99

Threshold Voltage :

4V

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Case Connection :

DRAIN

Radiation Hardening :

No

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Time@Peak Reflow Temperature-Max (s) :

40

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Packaging :

Tape and Reel (TR)

Pulsed Drain Current-Max (IDM) :

9.9A

JESD-609 Code :

e3

Vgs (Max) :

±20V

Turn On Delay Time :

2.7 ns

Additional Feature :

LOW THRESHOLD

Drain to Source Voltage (Vdss) :

100V

Terminal Finish :

Matte Tin (Sn)

Height :

2.39mm

Rise Time :

1.7ns

Power Dissipation-Max :

2.11W Ta

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Published :

2010

Pin Count :

3

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation :

8.5W

Fall Time (Typ) :

3.5 ns