ZXMN10A09KTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Mounting Type :

Surface Mount

Resistance :

85mOhm

Number of Elements :

1

Current Rating :

7.7A

Radiation Hardening :

No

Vgs (Max) :

±20V

Current - Continuous Drain (Id) @ 25°C :

5A Ta

RoHS Status :

ROHS3 Compliant

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Power Dissipation-Max :

2.15W Ta

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Width :

6.22mm

Max Operating Temperature :

150°C

Voltage - Rated DC :

100V

Mount :

Surface Mount

Min Operating Temperature :

-55°C

Fall Time (Typ) :

12.3 ns

FET Type :

N-Channel

Supplier Device Package :

TO-252-3

Rds On (Max) @ Id, Vgs :

85mOhm @ 4.6A, 10V

Gate Charge (Qg) (Max) @ Vgs :

26nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1313pF @ 50V

Published :

2010

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power Dissipation :

10.1W

Drain to Source Voltage (Vdss) :

100V

Factory Lead Time :

17 Weeks

Rds On Max :

85 mΩ

Number of Pins :

3

Height :

2.39mm

Drain to Source Resistance :

100MOhm

Number of Channels :

1

Drain to Source Breakdown Voltage :

100V

Input Capacitance :

1.313nF

Gate to Source Voltage (Vgs) :

20V

Continuous Drain Current (ID) :

7.7A

Turn-Off Delay Time :

27.5 ns

Operating Temperature :

-55°C~150°C TJ

Packaging :

Tape and Reel (TR)

REACH SVHC :

No SVHC

Weight :

3.949996g

Lead Free :

Lead Free

Rise Time :

5.3ns

Element Configuration :

Single

Vgs(th) (Max) @ Id :

4V @ 250µA

Length :

6.73mm

Turn On Delay Time :

6.8 ns