ZXMN10A08GTA
- Mfr.Part #
- ZXMN10A08GTA
- Manufacturer
- Diodes Incorporated
- Package / Case
- TO-261-4, TO-261AA
- Datasheet
- Download
- Description
- MOSFET N-CH 100V 2A SOT223
- Stock
- 163,629
- In Stock :
- 163,629
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- Manufacturer :
- Diodes Incorporated
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Height :
- 1.65mm
- Resistance :
- 250mOhm
- Rds On (Max) @ Id, Vgs :
- 250m Ω @ 3.2A, 10V
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 2V @ 250μA
- Packaging :
- Tape and Reel (TR)
- FET Type :
- N-Channel
- Power Dissipation :
- 3.9W
- Current - Continuous Drain (Id) @ 25°C :
- 2A Ta
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 6V 10V
- Terminal Form :
- Gull wing
- Published :
- 2006
- Fall Time (Typ) :
- 3.2 ns
- Weight :
- 7.994566mg
- Mount :
- Surface Mount
- Drain to Source Breakdown Voltage :
- 100V
- Number of Channels :
- 1
- Peak Reflow Temperature (Cel) :
- 260
- Transistor Element Material :
- SILICON
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Turn On Delay Time :
- 3.4 ns
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 7.7nC @ 10V
- Operating Temperature :
- -55°C~150°C TJ
- Operating Mode :
- ENHANCEMENT MODE
- Rise Time :
- 2.2ns
- Power Dissipation-Max :
- 2W Ta
- Time@Peak Reflow Temperature-Max (s) :
- 40
- Number of Terminations :
- 4
- Width :
- 3.7mm
- Vgs (Max) :
- ±20V
- JESD-30 Code :
- R-PDSO-G4
- Element Configuration :
- Single
- Terminal Position :
- Dual
- Gate to Source Voltage (Vgs) :
- 20V
- Factory Lead Time :
- 17 Weeks
- Package / Case :
- TO-261-4, TO-261AA
- Lead Free :
- Lead Free
- ECCN Code :
- EAR99
- Drain Current-Max (Abs) (ID) :
- 2A
- Qualification Status :
- Not Qualified
- Transistor Application :
- SWITCHING
- Mounting Type :
- Surface Mount
- Length :
- 6.7mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 405pF @ 50V
- Reach Compliance Code :
- not_compliant
- Terminal Finish :
- Matte Tin (Sn)
- Continuous Drain Current (ID) :
- 2A
- Pbfree Code :
- No
- Pin Count :
- 4
- Number of Elements :
- 1
- Turn-Off Delay Time :
- 8 ns
- RoHS Status :
- ROHS3 Compliant
- Datasheets
- ZXMN10A08GTA

N-Channel Tape & Reel (TR) 250m Ω @ 3.2A, 10V ±20V 405pF @ 50V 7.7nC @ 10V TO-261-4, TO-261AA
ZXMN10A08GTA Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 405pF @ 50V.This device conducts a continuous drain current (ID) of 2A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 2A.When the device is turned off, a turn-off delay time of 8 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 3.4 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).
ZXMN10A08GTA Features
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 8 ns
ZXMN10A08GTA Applications
There are a lot of Diodes Incorporated
ZXMN10A08GTA applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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