ZXMN10A11K

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

3.5A

Number of Elements :

1

Turn On Delay Time :

2.7 ns

Vgs (Max) :

±20V

Length :

6.73mm

Pin Count :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Terminal Form :

Gull wing

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

4V @ 250µA

Factory Lead Time :

17 Weeks

Number of Pins :

3

Element Configuration :

Single

Power Dissipation-Max :

2.11W Ta

Threshold Voltage :

4V

Pbfree Code :

No

Number of Terminations :

2

Height :

2.39mm

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Time@Peak Reflow Temperature-Max (s) :

40

Transistor Application :

SWITCHING

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Power Dissipation :

8.5W

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~150°C TJ

Drain Current-Max (Abs) (ID) :

2.4A

Weight :

3.949996g

Pulsed Drain Current-Max (IDM) :

9.9A

Width :

6.22mm

Case Connection :

DRAIN

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Turn-Off Delay Time :

7.4 ns

JESD-30 Code :

R-PSSO-G2

Operating Mode :

ENHANCEMENT MODE

Mounting Type :

Surface Mount

Packaging :

Tape and Reel (TR)

JESD-609 Code :

e3

Mount :

Surface Mount

REACH SVHC :

No SVHC

Resistance :

350mOhm

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Drain to Source Voltage (Vdss) :

100V

Fall Time (Typ) :

3.5 ns

ECCN Code :

EAR99

Number of Channels :

1

Rise Time :

1.7ns

Transistor Element Material :

SILICON

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Lead Free :

Lead Free

FET Type :

N-Channel

Published :

2010

Peak Reflow Temperature (Cel) :

260

Additional Feature :

LOW THRESHOLD

Radiation Hardening :

No

RoHS Status :

ROHS3 Compliant