ZXMN10A11K

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

ECCN Code :

EAR99

Mounting Type :

Surface Mount

Pin Count :

3

REACH SVHC :

No SVHC

Transistor Application :

SWITCHING

Resistance :

350mOhm

Mount :

Surface Mount

Case Connection :

DRAIN

Lead Free :

Lead Free

Operating Temperature :

-55°C~150°C TJ

Continuous Drain Current (ID) :

3.5A

Rise Time :

1.7ns

Peak Reflow Temperature (Cel) :

260

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Turn-Off Delay Time :

7.4 ns

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Height :

2.39mm

JESD-30 Code :

R-PSSO-G2

FET Type :

N-Channel

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

2.7 ns

Pulsed Drain Current-Max (IDM) :

9.9A

Weight :

3.949996g

Time@Peak Reflow Temperature-Max (s) :

40

Number of Pins :

3

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation-Max :

2.11W Ta

Current - Continuous Drain (Id) @ 25°C :

2.4A Ta

Terminal Finish :

Matte Tin (Sn)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Gate to Source Voltage (Vgs) :

20V

Drain Current-Max (Abs) (ID) :

2.4A

Published :

2010

Packaging :

Tape and Reel (TR)

Fall Time (Typ) :

3.5 ns

RoHS Status :

ROHS3 Compliant

Number of Channels :

1

Pbfree Code :

No

Radiation Hardening :

No

Length :

6.73mm

Width :

6.22mm

JESD-609 Code :

e3

Number of Terminations :

2

Threshold Voltage :

4V

Terminal Form :

Gull wing

Transistor Element Material :

SILICON

Factory Lead Time :

17 Weeks

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Vgs(th) (Max) @ Id :

4V @ 250µA

Element Configuration :

Single

Drain to Source Voltage (Vdss) :

100V

Vgs (Max) :

±20V

Number of Elements :

1

Power Dissipation :

8.5W

Additional Feature :

LOW THRESHOLD