ZXMN10A07FTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Power Dissipation :

625mW

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

REACH SVHC :

No SVHC

Published :

2006

Terminal Position :

Dual

Continuous Drain Current (ID) :

800mA

Number of Terminations :

3

Vgs (Max) :

±20V

Input Capacitance (Ciss) (Max) @ Vds :

138pF @ 50V

Gate to Source Voltage (Vgs) :

20V

Terminal Finish :

Matte Tin (Sn)

Voltage - Rated DC :

100V

Voltage :

100V

Fall Time (Typ) :

1.5 ns

Time@Peak Reflow Temperature-Max (s) :

40

Vgs(th) (Max) @ Id :

4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Package / Case :

TO-236-3, SC-59, SOT-23-3

RoHS Status :

ROHS3 Compliant

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Pbfree Code :

yes

Turn On Delay Time :

1.8 ns

Radiation Hardening :

No

Height :

1.1mm

Resistance :

700mOhm

Mount :

Surface Mount

JESD-609 Code :

e3

Peak Reflow Temperature (Cel) :

260

Transistor Application :

SWITCHING

Length :

3.04mm

Transistor Element Material :

SILICON

Drain to Source Breakdown Voltage :

100V

Max Junction Temperature (Tj) :

150°C

Factory Lead Time :

17 Weeks

Packaging :

Tape and Reel (TR)

Operating Temperature :

-55°C~150°C TJ

Lead Free :

Lead Free

Power Dissipation-Max :

625mW Ta

ECCN Code :

EAR99

Width :

1.4mm

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Number of Pins :

3

Current Rating :

800mA

Terminal Form :

Gull wing

Current :

8A

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.5A, 10V

Number of Channels :

1

Operating Mode :

ENHANCEMENT MODE

FET Type :

N-Channel

Number of Elements :

1

Mounting Type :

Surface Mount

Element Configuration :

Single

Rise Time :

1.5ns

Turn-Off Delay Time :

4.1 ns

Weight :

7.994566mg

Pin Count :

3