ZXMN10A08DN8TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Configuration :

SINGLE WITH BUILT-IN DIODE

Drain-source On Resistance-Max :

0.25Ohm

JESD-609 Code :

e3

Rds On (Max) @ Id, Vgs :

250m Ω @ 3.2A, 10V

Pulsed Drain Current-Max (IDM) :

9A

Operating Mode :

ENHANCEMENT MODE

JESD-30 Code :

R-PDSO-G8

Vgs(th) (Max) @ Id :

2V @ 250μA (Min)

Operating Temperature :

-55°C~150°C TJ

FET Type :

2 N-Channel (Dual)

Packaging :

Tape and Reel (TR)

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Published :

2006

Max Power Dissipation :

1.25W

FET Feature :

Logic Level Gate

Transistor Application :

SWITCHING

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 50V

Number of Elements :

1

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pin Count :

8

ECCN Code :

EAR99

Terminal Finish :

MATTE TIN

Mount :

Surface Mount

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Qualification Status :

Not Qualified

Transistor Element Material :

SILICON

Drain to Source Voltage (Vdss) :

100V

Peak Reflow Temperature (Cel) :

260

Current Rating :

2.1A

Continuous Drain Current (ID) :

1.6A

Terminal Form :

Gull wing

Mounting Type :

Surface Mount

Number of Terminations :

8

RoHS Status :

RoHS Compliant

Voltage - Rated DC :

100V

Time@Peak Reflow Temperature-Max (s) :

40