ZXMN10A07FTC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

138pF @ 50V

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Operating Mode :

ENHANCEMENT MODE

DS Breakdown Voltage-Min :

100V

Number of Elements :

1

ECCN Code :

EAR99

Gate Charge (Qg) (Max) @ Vgs :

2.9nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Drain Current-Max (Abs) (ID) :

0.7A

Number of Terminations :

3

Package / Case :

TO-236-3, SC-59, SOT-23-3

Operating Temperature :

-55°C~150°C TJ

Qualification Status :

Not Qualified

Terminal Form :

Gull wing

Pin Count :

3

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

RoHS Status :

RoHS Compliant

Vgs (Max) :

±20V

Power Dissipation-Max :

625mW Ta

Surface Mount :

yes

Packaging :

Tape and Reel (TR)

Published :

2012

Rds On (Max) @ Id, Vgs :

700m Ω @ 1.5A, 10V

Transistor Element Material :

SILICON

Terminal Position :

Dual

Current - Continuous Drain (Id) @ 25°C :

700mA Ta

Mounting Type :

Surface Mount

Vgs(th) (Max) @ Id :

4V @ 250µA

Reach Compliance Code :

Compliant

Configuration :

SINGLE WITH BUILT-IN DIODE

JESD-30 Code :

R-PDSO-G3

Drain-source On Resistance-Max :

0.7Ohm

Drain to Source Voltage (Vdss) :

100V