ZXMN10A08E6TC

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

7.7nC @ 10V

Published :

2012

REACH SVHC :

No SVHC

Operating Temperature :

-55°C~150°C TJ

Number of Pins :

6

Vgs(th) (Max) @ Id :

4V @ 250µA

Pin Count :

6

Configuration :

SINGLE WITH BUILT-IN DIODE

Height :

1.3mm

Turn-Off Delay Time :

8 ns

Pbfree Code :

yes

Radiation Hardening :

No

Additional Feature :

High Reliability

Number of Terminations :

6

ECCN Code :

EAR99

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Factory Lead Time :

17 Weeks

Weight :

14.996898mg

Length :

3.1mm

Mounting Type :

Surface Mount

Number of Elements :

1

Transistor Element Material :

SILICON

Package / Case :

SOT-23-6

Gate to Source Voltage (Vgs) :

20V

Terminal Form :

Gull wing

Rds On (Max) @ Id, Vgs :

250m Ω @ 3.2A, 10V

Resistance :

250mOhm

Lead Free :

Lead Free

Continuous Drain Current (ID) :

3.5A

Mount :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.5A Ta

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Terminal Finish :

Matte Tin (Sn)

Current Rating :

1.5A

JESD-609 Code :

e3

Drain to Source Breakdown Voltage :

100V

RoHS Status :

ROHS3 Compliant

Terminal Position :

Dual

Transistor Application :

SWITCHING

Fall Time (Typ) :

2.2 ns

Vgs (Max) :

±20V

Rise Time :

2.2ns

Packaging :

Tape and Reel (TR)

Power Dissipation-Max :

1.1W Ta

Voltage - Rated DC :

100V

FET Type :

N-Channel

Width :

1.8mm

Operating Mode :

ENHANCEMENT MODE

Turn On Delay Time :

3.4 ns

Power Dissipation :

1.7W

Input Capacitance (Ciss) (Max) @ Vds :

405pF @ 50V