ZXMN10A11GTA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Single

Current Rating :

1A

Number of Elements :

1

Input Capacitance (Ciss) (Max) @ Vds :

274pF @ 50V

Number of Terminations :

4

Voltage - Rated DC :

100V

Rise Time :

1.7ns

Height :

1.65mm

Peak Reflow Temperature (Cel) :

260

Vgs (Max) :

±20V

Published :

2010

Terminal Finish :

Matte Tin (Sn)

JESD-609 Code :

e3

Mounting Type :

Surface Mount

Current - Continuous Drain (Id) @ 25°C :

1.7A Ta

Terminal Form :

Gull wing

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Case Connection :

DRAIN

Package / Case :

TO-261-4, TO-261AA

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

350m Ω @ 2.6A, 10V

Continuous Drain Current (ID) :

2.4A

Number of Channels :

1

Lead Free :

Lead Free

Width :

3.7mm

Element Configuration :

Single

Resistance :

350mOhm

Turn-Off Delay Time :

7.4 ns

Drain to Source Breakdown Voltage :

100V

Fall Time (Typ) :

3.5 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

FET Type :

N-Channel

Time@Peak Reflow Temperature-Max (s) :

40

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

2.7 ns

Transistor Element Material :

SILICON

Pbfree Code :

No

Gate to Source Voltage (Vgs) :

20V

Terminal Position :

Dual

Weight :

7.994566mg

REACH SVHC :

No SVHC

JESD-30 Code :

R-PDSO-G4

Operating Temperature :

-55°C~150°C TJ

Transistor Application :

SWITCHING

Packaging :

Tape and Reel (TR)

ECCN Code :

EAR99

Power Dissipation :

3.9W

Drive Voltage (Max Rds On,Min Rds On) :

6V 10V

Radiation Hardening :

No

Gate Charge (Qg) (Max) @ Vgs :

5.4nC @ 10V

Mount :

Surface Mount

Power Dissipation-Max :

2W Ta

Length :

6.7mm