ZXMN6A09DN8TA

Manufacturer :

Diodes Incorporated

Product Category :

Transistors - FETs, MOSFETs - Arrays

Terminal Finish :

Matte Tin (Sn)

Drain Current-Max (Abs) (ID) :

4.3A

Gate Charge (Qg) (Max) @ Vgs :

24.2nC @ 5V

Drain to Source Breakdown Voltage :

60V

Operating Temperature :

-55°C~150°C TJ

Current - Continuous Drain (Id) @ 25°C :

4.3A

JESD-609 Code :

e3

Weight :

73.992255mg

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Surface Mount

Width :

4mm

Packaging :

Tape and Reel (TR)

Turn On Delay Time :

4.9 ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

25.3 ns

Terminal Form :

Gull wing

Max Power Dissipation :

2.1W

Power - Max :

1.25W

Operating Mode :

ENHANCEMENT MODE

FET Type :

2 N-Channel (Dual)

Lead Free :

Lead Free

Time@Peak Reflow Temperature-Max (s) :

40

Peak Reflow Temperature (Cel) :

260

Number of Terminations :

8

Height :

1.5mm

Pin Count :

8

Continuous Drain Current (ID) :

5.6A

Published :

2007

REACH SVHC :

No SVHC

Number of Channels :

2

RoHS Status :

ROHS3 Compliant

Transistor Application :

SWITCHING

Vgs(th) (Max) @ Id :

3V @ 250µA

Length :

5mm

FET Feature :

Logic Level Gate

Rise Time :

5ns

Current Rating :

4.4A

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Power Dissipation :

2.1W

Mount :

Surface Mount

Input Capacitance (Ciss) (Max) @ Vds :

1407pF @ 40V

Radiation Hardening :

No

Factory Lead Time :

17 Weeks

Number of Elements :

2

ECCN Code :

EAR99

Package / Case :

8-SOIC (0.154, 3.90mm Width)

Pbfree Code :

yes

Number of Pins :

8

FET Technology :

METAL-OXIDE SEMICONDUCTOR

Rds On (Max) @ Id, Vgs :

40m Ω @ 8.2A, 10V

Fall Time (Typ) :

4.6 ns

Voltage - Rated DC :

60V

Resistance :

40mOhm