STP2NK90Z
- Mfr.Part #
- STP2NK90Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 900V 2.1A TO220AB
- Stock
- 4,977
- In Stock :
- 4,977
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Power Dissipation :
- 70W
- Continuous Drain Current (ID) :
- 2.1A
- Threshold Voltage :
- 3.75V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Operating Temperature :
- -55°C~150°C TJ
- Resistance :
- 5Ohm
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 27nC @ 10V
- Number of Pins :
- 3
- Transistor Application :
- SWITCHING
- JEDEC-95 Code :
- TO-220AB
- Radiation Hardening :
- No
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Voltage - Rated DC :
- 900V
- RoHS Status :
- ROHS3 Compliant
- Number of Terminations :
- 3
- Operating Mode :
- ENHANCEMENT MODE
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Base Part Number :
- STP2N
- Current Rating :
- 2.1A
- Drain to Source Breakdown Voltage :
- 900V
- Series :
- SuperMESH™
- Lead Free :
- Lead Free
- Width :
- 4.6mm
- Current - Continuous Drain (Id) @ 25°C :
- 2.1A Tc
- REACH SVHC :
- No SVHC
- Pin Count :
- 3
- Gate to Source Voltage (Vgs) :
- 30V
- JESD-609 Code :
- e3
- Factory Lead Time :
- 12 Weeks
- Turn On Delay Time :
- 21 ns
- ECCN Code :
- EAR99
- FET Type :
- N-Channel
- Fall Time (Typ) :
- 40 ns
- Length :
- 10.4mm
- Power Dissipation-Max :
- 70W Tc
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Input Capacitance (Ciss) (Max) @ Vds :
- 485pF @ 25V
- Rise Time :
- 11ns
- Additional Feature :
- AVALANCHE RATED
- Mounting Type :
- Through Hole
- Height :
- 15.75mm
- Pulsed Drain Current-Max (IDM) :
- 8.4A
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Packaging :
- Tube
- Turn-Off Delay Time :
- 43 ns
- Rds On (Max) @ Id, Vgs :
- 6.5 Ω @ 1.05A, 10V
- Vgs (Max) :
- ±30V
- Element Configuration :
- Single
- Mount :
- Through Hole
- Package / Case :
- TO-220-3
- Datasheets
- STP2NK90Z

N-Channel Tube 6.5 Ω @ 1.05A, 10V ±30V 485pF @ 25V 27nC @ 10V TO-220-3
STP2NK90Z Description
STP2NK90Z is an N-channel Power MOSFET from the manufacturer of STMicroelectronics with a voltage of 900V. The operating temperature of STP2NK90Z is -55°C~150°C TJ and its maximum power dissipation are 70W. It is available in the TO-220-3 packaging way. These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the Super MESH? technology by STMicroelectronics, an optimization of the well-established Power MESH?. In addition to a significant reduction in on-resistance, these devices are designed to ensure a high level of DV/DT capability for the most demanding applications.
STP2NK90Z Features
-
Extremely high DV/DT capability
-
100% avalanche tested
-
Gate charge minimized
-
Very low intrinsic capacitance
-
Zener-protected
STP2NK90Z Applications
-
General-purpose amplifier
-
Switching applications
-
Power management
-
Industrial
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