STP200NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Vgs (Max) :

±20V

Voltage - Rated DC :

40V

Continuous Drain Current (ID) :

120A

Power Dissipation :

310W

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Lead Free :

Lead Free

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Number of Pins :

3

Gate to Source Voltage (Vgs) :

20V

Width :

4.6mm

Height :

15.75mm

JESD-609 Code :

e3

Mount :

Through Hole

Radiation Hardening :

No

Number of Elements :

1

Fall Time (Typ) :

120 ns

Base Part Number :

STP200

ECCN Code :

EAR99

REACH SVHC :

No SVHC

Length :

10.4mm

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Transistor Element Material :

SILICON

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Rise Time :

320ns

Operating Mode :

ENHANCEMENT MODE

Turn-Off Delay Time :

140 ns

Drain to Source Breakdown Voltage :

40V

Vgs(th) (Max) @ Id :

4V @ 250µA

Current Rating :

120A

Package / Case :

TO-220-3

Number of Terminations :

3

Pin Count :

3

Packaging :

Tube

Threshold Voltage :

4V

Terminal Finish :

Tin (Sn)

Operating Temperature :

-55°C~175°C TJ

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

480A

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

FET Type :

N-Channel

Series :

STripFET™ II

Mounting Type :

Through Hole

Turn On Delay Time :

30 ns

Power Dissipation-Max :

310W Tc

Transistor Application :

SWITCHING

RoHS Status :

ROHS3 Compliant

Element Configuration :

Single