STP200NF04

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Fall Time (Typ) :

120 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs(th) (Max) @ Id :

4V @ 250µA

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

Pin Count :

3

Number of Pins :

3

Turn On Delay Time :

30 ns

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

FET Type :

N-Channel

Voltage - Rated DC :

40V

Rds On (Max) @ Id, Vgs :

3.7m Ω @ 90A, 10V

Mounting Type :

Through Hole

Packaging :

Tube

Threshold Voltage :

4V

Continuous Drain Current (ID) :

120A

Width :

4.6mm

Terminal Finish :

Tin (Sn)

Number of Elements :

1

JEDEC-95 Code :

TO-220AB

Operating Temperature :

-55°C~175°C TJ

Element Configuration :

Single

Power Dissipation-Max :

310W Tc

Turn-Off Delay Time :

140 ns

REACH SVHC :

No SVHC

Pulsed Drain Current-Max (IDM) :

480A

Height :

15.75mm

Base Part Number :

STP200

Vgs (Max) :

±20V

Number of Terminations :

3

Gate Charge (Qg) (Max) @ Vgs :

210nC @ 10V

Length :

10.4mm

Power Dissipation :

310W

JESD-609 Code :

e3

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Package / Case :

TO-220-3

Series :

STripFET™ II

Gate to Source Voltage (Vgs) :

20V

Mount :

Through Hole

Current Rating :

120A

Drain to Source Breakdown Voltage :

40V

ECCN Code :

EAR99

RoHS Status :

ROHS3 Compliant

Rise Time :

320ns

Lead Free :

Lead Free

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE