STP200NF04L
- Mfr.Part #
- STP200NF04L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 40V 120A TO220AB
- Stock
- 7,051
- In Stock :
- 7,051
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- Number of Pins :
- 3
- Series :
- STripFET™ II
- Vgs (Max) :
- ±16V
- Package / Case :
- TO-220-3
- Rds On (Max) @ Id, Vgs :
- 3.8m Ω @ 50A, 10V
- Current Rating :
- 120A
- JEDEC-95 Code :
- TO-220AB
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Mounting Type :
- Through Hole
- Packaging :
- Tube
- ECCN Code :
- EAR99
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~175°C TJ
- Pulsed Drain Current-Max (IDM) :
- 480A
- Fall Time (Typ) :
- 80 ns
- JESD-609 Code :
- e3
- Number of Terminations :
- 3
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Voltage - Rated DC :
- 40V
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Input Capacitance (Ciss) (Max) @ Vds :
- 6400pF @ 25V
- Operating Mode :
- ENHANCEMENT MODE
- FET Type :
- N-Channel
- Turn-Off Delay Time :
- 90 ns
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- Power Dissipation-Max :
- 300W Tc
- Lead Free :
- Lead Free
- Pin Count :
- 3
- Number of Elements :
- 1
- Gate Charge (Qg) (Max) @ Vgs :
- 90nC @ 4.5V
- Radiation Hardening :
- No
- Turn On Delay Time :
- 37 ns
- Mount :
- Through Hole
- Power Dissipation :
- 300W
- Rise Time :
- 270ns
- Element Configuration :
- Single
- Pbfree Code :
- yes
- Terminal Finish :
- Matte Tin (Sn)
- Drain to Source Breakdown Voltage :
- 40V
- Gate to Source Voltage (Vgs) :
- 16V
- Continuous Drain Current (ID) :
- 120A
- RoHS Status :
- ROHS3 Compliant
- Base Part Number :
- STP200
- Datasheets
- STP200NF04L

N-Channel Tube 3.8m Ω @ 50A, 10V ±16V 6400pF @ 25V 90nC @ 4.5V TO-220-3
STP200NF04L Description
STP200NF04L is a 40v N-channel STripFET? II MOSFET. This MOSFET STP200NF04L is the latest development of STMicroelectronics' unique ?°Single Feature Size??± strip-based process. The transistor STP200NF04L shows extremely high packing density for low on-resistance, rugged avalanche characteristics, and less critical alignment steps therefore a remarkable manufacturing reproducibility. This new improved device STP200NF04L has been specifically designed for Automotive applications.
STP200NF04L Features
-
Typical RDS(on) = 3m?
-
100% Avalanche Tested
-
Low Threshold Drive
-
Drain-source Voltage (VGS = 0): 40v
-
Gate- source Voltage: ?à16v
STP200NF04L Applications
-
High current, high switching speed
-
Mechanical testing
-
Vibration analysis
-
Ultrasonic inspection
-
Data logging
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