STP200N6F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Gate Charge (Qg) (Max) @ Vgs :

100nC @ 10V

Rise Time :

75ns

RoHS Status :

ROHS3 Compliant

Radiation Hardening :

No

FET Type :

N-Channel

Fall Time (Typ) :

14 ns

Turn-Off Delay Time :

86 ns

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

ECCN Code :

EAR99

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

3.9m Ω @ 60A, 10V

Operating Temperature :

-55°C~175°C TJ

Mount :

Through Hole

Terminal Finish :

Matte Tin (Sn)

JEDEC-95 Code :

TO-220AB

Vgs (Max) :

±20V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Application :

SWITCHING

Element Configuration :

Single

Input Capacitance (Ciss) (Max) @ Vds :

6800pF @ 25V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Turn On Delay Time :

26 ns

Drain to Source Breakdown Voltage :

60V

Power Dissipation-Max :

330W Tc

Base Part Number :

STP200

Transistor Element Material :

SILICON

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Lead Free :

Lead Free

JESD-609 Code :

e3

Pulsed Drain Current-Max (IDM) :

480A

Additional Feature :

ULTRA-LOW RESISTANCE

Vgs(th) (Max) @ Id :

4V @ 250µA

Pbfree Code :

yes

Packaging :

Tube

Pin Count :

3

Continuous Drain Current (ID) :

120A

Number of Terminations :

3

Number of Elements :

1

Package / Case :

TO-220-3

Power Dissipation :

330W

Series :

STripFET™

JESD-30 Code :

R-PSFM-T3

Drain-source On Resistance-Max :

0.0038Ohm