STP20N95K5
- Mfr.Part #
- STP20N95K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 950V 17.5A TO220-3
- Stock
- 3,286
- In Stock :
- 3,286
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Transistor Application :
- SWITCHING
- RoHS Status :
- ROHS3 Compliant
- Continuous Drain Current (ID) :
- 17.5A
- Mount :
- Through Hole
- Gate to Source Voltage (Vgs) :
- 30V
- Lead Free :
- Lead Free
- Radiation Hardening :
- No
- Pin Count :
- 3
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Width :
- 4.6mm
- ECCN Code :
- EAR99
- Resistance :
- 330mOhm
- FET Type :
- N-Channel
- Number of Elements :
- 1
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Factory Lead Time :
- 17 Weeks
- Fall Time (Typ) :
- 20 ns
- Series :
- SuperMESH5™
- Rise Time :
- 12ns
- Drain to Source Breakdown Voltage :
- 950V
- Mounting Type :
- Through Hole
- Element Configuration :
- Single
- Power Dissipation-Max :
- 250W Tc
- Transistor Element Material :
- SILICON
- Contact Plating :
- Tin
- Number of Pins :
- 3
- Pulsed Drain Current-Max (IDM) :
- 62A
- Power Dissipation :
- 250W
- Rds On (Max) @ Id, Vgs :
- 330m Ω @ 9A, 10V
- Packaging :
- Tube
- Package / Case :
- TO-220-3
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 100V
- Operating Temperature :
- -55°C~150°C TJ
- Turn On Delay Time :
- 17 ns
- Length :
- 10.4mm
- Current - Continuous Drain (Id) @ 25°C :
- 17.5A Tc
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Base Part Number :
- STP20N
- Height :
- 15.75mm
- Vgs (Max) :
- ±30V
- JEDEC-95 Code :
- TO-220AB
- Operating Mode :
- ENHANCEMENT MODE
- Turn-Off Delay Time :
- 70 ns
- Gate Charge (Qg) (Max) @ Vgs :
- 40nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Number of Terminations :
- 3
- Datasheets
- STP20N95K5

N-Channel Tube 330m Ω @ 9A, 10V ±30V 1500pF @ 100V 40nC @ 10V TO-220-3
STP20N95K5 Description
STP20N95K5 belongs to the family of N-channel MDmesh? K5 power MOSFETs developed by STMicroelectronics based on its MDmesh? technology. It is able to provide lower on-resistance and superior switching performance based on the strip layout and improved vertical structure. As a result, it is well suited for applications where superior power density and high efficiency are required.
STP20N95K5 Features
-
Low RDS (on)
-
Improved vertical structure
-
Low on-state resistance
-
Low gate charge
-
Industry's best FoM (figure of merit)
-
Supplied in the TO-220 package
STP20N95K5 Applications
-
Switching applications
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