STP20NE06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Rise Time :

45ns

Mounting Type :

Through Hole

Lead Free :

Contains Lead

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Drain to Source Breakdown Voltage :

60V

ECCN Code :

EAR99

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Pin Count :

3

Base Part Number :

STP20N

Current Rating :

20A

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Vgs(th) (Max) @ Id :

1V @ 250μA

JESD-30 Code :

R-PSFM-T3

Packaging :

Tube

Package / Case :

TO-220-3

Power Dissipation-Max :

70W Tc

Drain-source On Resistance-Max :

0.085Ohm

Operating Temperature :

175°C TJ

Series :

STripFET™

Mount :

Through Hole

Fall Time (Typ) :

25 ns

Avalanche Energy Rating (Eas) :

100 mJ

Element Configuration :

Single

Vgs (Max) :

±20V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Reach Compliance Code :

not_compliant

Terminal Finish :

Matte Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Qualification Status :

Not Qualified

Voltage - Rated DC :

60V

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Power Dissipation :

70W

Number of Elements :

1

Number of Terminations :

3

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Continuous Drain Current (ID) :

20A

Transistor Element Material :

SILICON

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

Non-RoHS Compliant

Pulsed Drain Current-Max (IDM) :

80A

Transistor Application :

SWITCHING

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Gate to Source Voltage (Vgs) :

20V