STP20NE06L
- Mfr.Part #
- STP20NE06L
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 60V 20A TO220AB
- Stock
- 20,417
- In Stock :
- 20,417
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Series :
- STripFET™
- Power Dissipation :
- 70W
- Pin Count :
- 3
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Reach Compliance Code :
- not_compliant
- Current - Continuous Drain (Id) @ 25°C :
- 20A Tc
- Gate to Source Voltage (Vgs) :
- 20V
- Pulsed Drain Current-Max (IDM) :
- 80A
- Gate Charge (Qg) (Max) @ Vgs :
- 20nC @ 5V
- JEDEC-95 Code :
- TO-220AB
- Package / Case :
- TO-220-3
- Drive Voltage (Max Rds On,Min Rds On) :
- 5V 10V
- Voltage - Rated DC :
- 60V
- Mounting Type :
- Through Hole
- Fall Time (Typ) :
- 25 ns
- Rise Time :
- 45ns
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Drain-source On Resistance-Max :
- 0.085Ohm
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Operating Temperature :
- 175°C TJ
- Qualification Status :
- Not Qualified
- Current Rating :
- 20A
- Rds On (Max) @ Id, Vgs :
- 70m Ω @ 10A, 10V
- Lead Free :
- Contains Lead
- Vgs (Max) :
- ±20V
- Operating Mode :
- ENHANCEMENT MODE
- RoHS Status :
- Non-RoHS Compliant
- JESD-30 Code :
- R-PSFM-T3
- Element Configuration :
- Single
- Mount :
- Through Hole
- Number of Terminations :
- 3
- Number of Elements :
- 1
- JESD-609 Code :
- e3
- Vgs(th) (Max) @ Id :
- 1V @ 250μA
- Transistor Element Material :
- SILICON
- Power Dissipation-Max :
- 70W Tc
- Drain to Source Breakdown Voltage :
- 60V
- Base Part Number :
- STP20N
- Continuous Drain Current (ID) :
- 20A
- Transistor Application :
- SWITCHING
- Avalanche Energy Rating (Eas) :
- 100 mJ
- Terminal Finish :
- Matte Tin (Sn)
- FET Type :
- N-Channel
- ECCN Code :
- EAR99
- Input Capacitance (Ciss) (Max) @ Vds :
- 800pF @ 25V
- Datasheets
- STP20NE06L
STP20NE06L Documents

N-Channel Tube 70m Ω @ 10A, 10V ±20V 800pF @ 25V 20nC @ 5V TO-220-3
STP20NE06L Description
The STP20NE06L Power MOSFET from STMicroelectronics is the next evolution of the company's distinctive "single feature size"TM strip-based technology. The resultant transistor has remarkable manufacturing reproducibility because of its extremely high packing density for low on-resistance, tough avalanche properties, and less essential alignment stages.
STP20NE06L Features
-
Avalanche rugged technology
-
175℃ operating temperature
-
100% avalanche tested
-
Application-oriented characterization
-
High dv/dt capability
STP20NE06L Applications
-
DC Motor controller
-
DC-DC & DC-AC converters
-
Synchronous rectification
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