STP20NE06L

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Operating Mode :

ENHANCEMENT MODE

Base Part Number :

STP20N

Gate Charge (Qg) (Max) @ Vgs :

20nC @ 5V

Lead Free :

Contains Lead

RoHS Status :

Non-RoHS Compliant

Mounting Type :

Through Hole

Power Dissipation-Max :

70W Tc

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Voltage - Rated DC :

60V

JEDEC-95 Code :

TO-220AB

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Package / Case :

TO-220-3

JESD-609 Code :

e3

Avalanche Energy Rating (Eas) :

100 mJ

Input Capacitance (Ciss) (Max) @ Vds :

800pF @ 25V

Vgs (Max) :

±20V

JESD-30 Code :

R-PSFM-T3

ECCN Code :

EAR99

Continuous Drain Current (ID) :

20A

Power Dissipation :

70W

Drain-source On Resistance-Max :

0.085Ohm

FET Type :

N-Channel

Reach Compliance Code :

not_compliant

Gate to Source Voltage (Vgs) :

20V

Pulsed Drain Current-Max (IDM) :

80A

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

Element Configuration :

Single

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Packaging :

Tube

Qualification Status :

Not Qualified

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Operating Temperature :

175°C TJ

Terminal Finish :

Matte Tin (Sn)

Vgs(th) (Max) @ Id :

1V @ 250μA

Fall Time (Typ) :

25 ns

Rise Time :

45ns

Pin Count :

3

Series :

STripFET™

Drain to Source Breakdown Voltage :

60V

Current Rating :

20A

Mount :

Through Hole

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

5V 10V

Current - Continuous Drain (Id) @ 25°C :

20A Tc

Number of Elements :

1