STP200N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Input Capacitance (Ciss) (Max) @ Vds :

5100pF @ 25V

JESD-609 Code :

e3

Gate Charge (Qg) (Max) @ Vgs :

75nC @ 10V

Mount :

Through Hole

Power Dissipation-Max :

300W Tc

Drain to Source Breakdown Voltage :

40V

Lead Free :

Lead Free

Radiation Hardening :

No

Case Connection :

DRAIN

Fall Time (Typ) :

65 ns

Avalanche Energy Rating (Eas) :

862 mJ

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Resistance :

3.5mOhm

Turn-Off Delay Time :

90 ns

Rise Time :

180ns

Number of Terminations :

3

Terminal Finish :

Matte Tin (Sn)

FET Type :

N-Channel

Package / Case :

TO-220-3

Transistor Application :

SWITCHING

Drive Voltage (Max Rds On,Min Rds On) :

10V

Pulsed Drain Current-Max (IDM) :

480A

Power Dissipation :

300W

Mounting Type :

Through Hole

Packaging :

Tube

JESD-30 Code :

R-PSFM-T3

Rds On (Max) @ Id, Vgs :

4.4m Ω @ 80A, 10V

Element Configuration :

Single

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Base Part Number :

STP200

Gate to Source Voltage (Vgs) :

20V

Operating Temperature :

-55°C~175°C TJ

ECCN Code :

EAR99

Transistor Element Material :

SILICON

Vgs (Max) :

±20V

JEDEC-95 Code :

TO-220AB

Pin Count :

3

Continuous Drain Current (ID) :

120A

Series :

STripFET™

RoHS Status :

ROHS3 Compliant

Turn On Delay Time :

19 ns

Operating Mode :

ENHANCEMENT MODE

Number of Elements :

1

Vgs(th) (Max) @ Id :

4V @ 250µA