STP20NF20

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Continuous Drain Current (ID) :

18A

Pin Count :

3

Rise Time :

30ns

Transistor Application :

SWITCHING

Power Dissipation-Max :

110W Tc

Element Configuration :

Single

Package / Case :

TO-220-3

Length :

10.4mm

Resistance :

125mOhm

Pulsed Drain Current-Max (IDM) :

72A

Lead Free :

Lead Free

Operating Temperature :

-55°C~175°C TJ

Lifecycle Status :

ACTIVE (Last Updated: 8 months ago)

Vgs(th) (Max) @ Id :

4V @ 250µA

JESD-609 Code :

e3

Packaging :

Tube

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

940pF @ 25V

Base Part Number :

STP20N

ECCN Code :

EAR99

Turn On Delay Time :

15 ns

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Transistor Element Material :

SILICON

Mount :

Through Hole

Height :

15.75mm

Voltage - Rated DC :

200V

FET Type :

N-Channel

Current - Continuous Drain (Id) @ 25°C :

18A Tc

Gate to Source Voltage (Vgs) :

20V

Current Rating :

18A

Rds On (Max) @ Id, Vgs :

125m Ω @ 10A, 10V

Vgs (Max) :

±20V

Number of Pins :

3

Terminal Finish :

Tin (Sn)

Number of Terminations :

3

Operating Mode :

ENHANCEMENT MODE

Power Dissipation :

90W

Case Connection :

Isolated

Mounting Type :

Through Hole

REACH SVHC :

No SVHC

JEDEC-95 Code :

TO-220AB

Factory Lead Time :

12 Weeks

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

39nC @ 10V

Threshold Voltage :

3V

Number of Elements :

1

Fall Time (Typ) :

10 ns

Width :

4.6mm

Series :

STripFET™

Drain to Source Breakdown Voltage :

200V

Turn-Off Delay Time :

40 ns