STP20N20

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Mfr.Part #
STP20N20
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 200V 18A TO220AB
Stock
22,172
In Stock :
22,172

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Continuous Drain Current (ID) :
18A
Lead Free :
Lead Free
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Terminal Finish :
Matte Tin (Sn)
Power Dissipation-Max :
90W Tc
Packaging :
Tube
Gate Charge (Qg) (Max) @ Vgs :
39nC @ 10V
Turn On Delay Time :
15 ns
Radiation Hardening :
No
JESD-609 Code :
e3
Transistor Element Material :
SILICON
Pulsed Drain Current-Max (IDM) :
72A
Power Dissipation :
90W
Current - Continuous Drain (Id) @ 25°C :
18A Tc
Operating Temperature :
-50°C~150°C TJ
Input Capacitance (Ciss) (Max) @ Vds :
940pF @ 25V
Turn-Off Delay Time :
40 ns
Series :
STripFET™ II
Pbfree Code :
yes
RoHS Status :
ROHS3 Compliant
Transistor Application :
SWITCHING
Pin Count :
3
Drain to Source Breakdown Voltage :
200V
ECCN Code :
EAR99
Gate to Source Voltage (Vgs) :
20V
Base Part Number :
STP20N
Rds On (Max) @ Id, Vgs :
125m Ω @ 10A, 10V
Vgs(th) (Max) @ Id :
4V @ 250µA
Number of Terminations :
3
Current Rating :
18A
Rise Time :
30ns
JEDEC-95 Code :
TO-220AB
Operating Mode :
ENHANCEMENT MODE
Package / Case :
TO-220-3
Voltage - Rated DC :
200V
Vgs (Max) :
±20V
Mounting Type :
Through Hole
Element Configuration :
Single
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Number of Elements :
1
JESD-30 Code :
R-PSFM-T3
Fall Time (Typ) :
10 ns
Datasheets
STP20N20
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP20N20 from Chip IC,where excellence meets affordability. This product stands out with its Operating Temperature:-50°C~150°C TJ, Base Part Number:STP20N, Number of Terminations:3, Package / Case:TO-220-3, Mounting Type:Through Hole, STP20N20 pinout, STP20N20 datasheet PDF, STP20N20 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP20N20 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP20N20


N-Channel Tube 125m Ω @ 10A, 10V ±20V 940pF @ 25V 39nC @ 10V TO-220-3

STP20N20 Overview


The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 940pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 18A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=200V. And this device has 200V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 40 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 72A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.By using drive voltage (10V), this device helps reduce its overall power consumption.

STP20N20 Features


a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 40 ns
based on its rated peak drain current 72A.


STP20N20 Applications


There are a lot of STMicroelectronics
STP20N20 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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