STP200NF03
- Mfr.Part #
- STP200NF03
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 30V 120A TO220AB
- Stock
- 2,321
- In Stock :
- 2,321
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- JEDEC-95 Code :
- TO-220AB
- Number of Pins :
- 3
- Input Capacitance (Ciss) (Max) @ Vds :
- 4950pF @ 25V
- Lifecycle Status :
- NRND (Last Updated: 8 months ago)
- Contact Plating :
- Tin
- Turn-Off Delay Time :
- 75 ns
- Resistance :
- 3.7mOhm
- Base Part Number :
- STP200
- Gate to Source Voltage (Vgs) :
- 20V
- Rds On (Max) @ Id, Vgs :
- 3.6m Ω @ 60A, 10V
- Current Rating :
- 120A
- Turn On Delay Time :
- 30 ns
- Width :
- 4.6mm
- REACH SVHC :
- No SVHC
- Current - Continuous Drain (Id) @ 25°C :
- 120A Tc
- Fall Time (Typ) :
- 60 ns
- Pin Count :
- 3
- Transistor Element Material :
- SILICON
- Lead Free :
- Lead Free
- Threshold Voltage :
- 4V
- Number of Elements :
- 1
- Packaging :
- Tube
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Element Configuration :
- Single
- Mount :
- Through Hole
- Transistor Application :
- SWITCHING
- Operating Temperature :
- -55°C~175°C TJ
- ECCN Code :
- EAR99
- Height :
- 9.15mm
- Voltage - Rated DC :
- 30V
- Operating Mode :
- ENHANCEMENT MODE
- Power Dissipation :
- 300W
- Drain to Source Breakdown Voltage :
- 30V
- FET Type :
- N-Channel
- Additional Feature :
- AVALANCHE RATED
- Radiation Hardening :
- No
- Rise Time :
- 195ns
- Pulsed Drain Current-Max (IDM) :
- 480A
- Series :
- STripFET™ III
- Number of Terminations :
- 3
- JESD-609 Code :
- e3
- Power Dissipation-Max :
- 300W Tc
- Vgs(th) (Max) @ Id :
- 4V @ 250µA
- RoHS Status :
- ROHS3 Compliant
- Gate Charge (Qg) (Max) @ Vgs :
- 140nC @ 10V
- Continuous Drain Current (ID) :
- 60A
- Vgs (Max) :
- ±20V
- Length :
- 10.4mm
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Case Connection :
- DRAIN
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STP200NF03

N-Channel Tube 3.6m Ω @ 60A, 10V ±20V 4950pF @ 25V 140nC @ 10V TO-220-3
STP200NF03 Description
STP200NF03 Power MOSFET is the latest development of STMicroelectronics' "Single Feature SizeTM" process. As a result, the transistor demonstrates an extremely high packing density, avalanche resistance traits that are rugged, and less critical alignment steps, which translates into remarkable reproducibility in manufacturing.
STP200NF03 Features
-
100% avalanche tested
-
Standard threshold drive
STP200NF03 Applications
-
Drivers: Relays, Solenoids, Lamps
-
Hammers, Displays, Memories
-
Transistors, etc.
-
Battery Operated Systems
-
Power Supply, Converter Circuits
-
Motor Control
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