STP20NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Pin Count :

3

Case Connection :

DRAIN

Package / Case :

TO-220-3

Transistor Element Material :

SILICON

Power Dissipation :

60W

Vgs(th) (Max) @ Id :

4V @ 250µA

JEDEC-95 Code :

TO-220AB

Transistor Application :

SWITCHING

Vgs (Max) :

±20V

Mounting Type :

Through Hole

Mount :

Through Hole

RoHS Status :

ROHS3 Compliant

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

FET Type :

N-Channel

Lead Free :

Lead Free

Pulsed Drain Current-Max (IDM) :

80A

Power Dissipation-Max :

60W Tc

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Resistance :

70mOhm

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Base Part Number :

STP20N

Drain to Source Breakdown Voltage :

60V

Number of Elements :

1

Element Configuration :

Single

Drive Voltage (Max Rds On,Min Rds On) :

10V

Series :

STripFET™ II

Turn On Delay Time :

5 ns

Operating Mode :

ENHANCEMENT MODE

Avalanche Energy Rating (Eas) :

120 mJ

Fall Time (Typ) :

5 ns

Voltage - Rated DC :

60V

Turn-Off Delay Time :

15 ns

Current Rating :

20A

Number of Pins :

3

Number of Terminations :

3

Packaging :

Tube

Gate to Source Voltage (Vgs) :

20V

Rise Time :

15ns

Terminal Finish :

Tin (Sn)

JESD-609 Code :

e3

ECCN Code :

EAR99

Radiation Hardening :

No

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Continuous Drain Current (ID) :

20A

Operating Temperature :

-55°C~175°C TJ

Current - Continuous Drain (Id) @ 25°C :

20A Tc