STP20NF06

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Number of Elements :

1

Rise Time :

15ns

Terminal Finish :

Tin (Sn)

Turn On Delay Time :

5 ns

Case Connection :

DRAIN

Drain to Source Breakdown Voltage :

60V

RoHS Status :

ROHS3 Compliant

ECCN Code :

EAR99

Resistance :

70mOhm

Current - Continuous Drain (Id) @ 25°C :

20A Tc

FET Type :

N-Channel

Mounting Type :

Through Hole

Input Capacitance (Ciss) (Max) @ Vds :

400pF @ 25V

Packaging :

Tube

Base Part Number :

STP20N

JEDEC-95 Code :

TO-220AB

JESD-609 Code :

e3

Power Dissipation :

60W

Transistor Element Material :

SILICON

Radiation Hardening :

No

Voltage - Rated DC :

60V

Vgs(th) (Max) @ Id :

4V @ 250µA

Lead Free :

Lead Free

Series :

STripFET™ II

Turn-Off Delay Time :

15 ns

Element Configuration :

Single

Continuous Drain Current (ID) :

20A

Current Rating :

20A

Avalanche Energy Rating (Eas) :

120 mJ

Transistor Application :

SWITCHING

Number of Terminations :

3

Power Dissipation-Max :

60W Tc

Number of Pins :

3

Pin Count :

3

Gate to Source Voltage (Vgs) :

20V

Package / Case :

TO-220-3

Vgs (Max) :

±20V

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Operating Temperature :

-55°C~175°C TJ

Pulsed Drain Current-Max (IDM) :

80A

Fall Time (Typ) :

5 ns

Operating Mode :

ENHANCEMENT MODE

Rds On (Max) @ Id, Vgs :

70m Ω @ 10A, 10V

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mount :

Through Hole

Moisture Sensitivity Level (MSL) :

1 (Unlimited)