STP20N65M5
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- Mfr.Part #
- STP20N65M5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 650V 18A TO220
- Stock
- 10,135
- In Stock ：
- 10,135
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Rise Time :
- 7.5ns
- Current - Continuous Drain (Id) @ 25°C :
- 18A Tc
- Resistance :
- 168MOhm
- Series :
- MDmesh™ V
- Pulsed Drain Current-Max (IDM) :
- 72A
- Vgs (Max) :
- ±25V
- Fall Time (Typ) :
- 7.5 ns
- Mount :
- Through Hole
- Continuous Drain Current (ID) :
- 18A
- Packaging :
- Tube
- FET Type :
- N-Channel
- Operating Mode :
- ENHANCEMENT MODE
- Factory Lead Time :
- 17 Weeks
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Turn On Delay Time :
- 43 ns
- Transistor Element Material :
- SILICON
- Element Configuration :
- Single
- Transistor Application :
- SWITCHING
- Lead Free :
- Lead Free
- Package / Case :
- TO-220-3
- Mounting Type :
- Through Hole
- Number of Pins :
- 3
- Power Dissipation-Max :
- 130W Tc
- Number of Terminations :
- 3
- Turn-Off Delay Time :
- 43 ns
- Number of Elements :
- 1
- Drain to Source Breakdown Voltage :
- 650V
- Length :
- 10.4mm
- Base Part Number :
- STP20N
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 4.6mm
- JEDEC-95 Code :
- TO-220AB
- Input Capacitance (Ciss) (Max) @ Vds :
- 1345pF @ 100V
- ECCN Code :
- EAR99
- Power Dissipation :
- 130W
- Avalanche Energy Rating (Eas) :
- 270 mJ
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Gate Charge (Qg) (Max) @ Vgs :
- 45nC @ 10V
- RoHS Status :
- ROHS3 Compliant
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Height :
- 15.75mm
- Case Connection :
- DRAIN
- Rds On (Max) @ Id, Vgs :
- 190m Ω @ 9A, 10V
- Operating Temperature :
- -55°C~150°C TJ
- Datasheets
- STP20N65M5
N-Channel Tube 190m Ω @ 9A, 10V ±25V 1345pF @ 100V 45nC @ 10V TO-220-3
STP20N65M5 Overview
The MOSFET's breakdown is called "avalanche break down", and the avalanche energy applied to transistor is rated as 270 mJ (Eas).An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 1345pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 18A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 650V, and this device has a drainage-to-source breakdown voltage of 650VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 43 ns.Peak drain current is 72A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 43 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP20N65M5 Features
the avalanche energy rating (Eas) is 270 mJ
a continuous drain current (ID) of 18A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 43 ns
based on its rated peak drain current 72A.
STP20N65M5 Applications
There are a lot of STMicroelectronics
STP20N65M5 applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
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