STP2NK60Z

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Lead Free :

Lead Free

Rds On (Max) @ Id, Vgs :

8 Ω @ 700mA, 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Vgs (Max) :

±30V

Current Rating :

1.4A

FET Type :

N-Channel

Radiation Hardening :

No

Resistance :

8Ohm

JESD-609 Code :

e3

Rise Time :

30ns

Number of Terminations :

3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Avalanche Energy Rating (Eas) :

90 mJ

Mount :

Through Hole

REACH SVHC :

No SVHC

Current - Continuous Drain (Id) @ 25°C :

1.4A Tc

Operating Mode :

ENHANCEMENT MODE

Input Capacitance (Ciss) (Max) @ Vds :

170pF @ 25V

Transistor Element Material :

SILICON

Series :

SuperMESH™

Element Configuration :

Single

Power Dissipation :

45W

Gate Charge (Qg) (Max) @ Vgs :

10nC @ 10V

Turn On Delay Time :

8 ns

Number of Pins :

3

Vgs(th) (Max) @ Id :

4.5V @ 50μA

Power Dissipation-Max :

45W Tc

Fall Time (Typ) :

55 ns

Base Part Number :

STP2N

Pulsed Drain Current-Max (IDM) :

6A

Package / Case :

TO-220-3

Operating Temperature :

-55°C~150°C TJ

Pin Count :

3

Turn-Off Delay Time :

22 ns

Drain to Source Breakdown Voltage :

600V

Threshold Voltage :

3.75V

Transistor Application :

SWITCHING

JEDEC-95 Code :

TO-220AB

Continuous Drain Current (ID) :

1.4A

Packaging :

Tube

Number of Elements :

1

RoHS Status :

ROHS3 Compliant

Voltage - Rated DC :

600V

Terminal Finish :

Matte Tin (Sn)

Gate to Source Voltage (Vgs) :

30V

Mounting Type :

Through Hole