STP2NK100Z
- Mfr.Part #
- STP2NK100Z
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 1000V 1.85A TO220AB
- Stock
- 1,466
- In Stock :
- 1,466
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Mount :
- Through Hole
- Contact Plating :
- Tin
- Operating Mode :
- ENHANCEMENT MODE
- Series :
- SuperMESH™
- Operating Temperature :
- -55°C~150°C TJ
- JEDEC-95 Code :
- TO-220AB
- Height :
- 15.75mm
- Resistance :
- 8.5Ohm
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Mounting Type :
- Through Hole
- Radiation Hardening :
- No
- Transistor Application :
- SWITCHING
- Factory Lead Time :
- 12 Weeks
- Drain to Source Breakdown Voltage :
- 1kV
- Pin Count :
- 3
- Continuous Drain Current (ID) :
- 1.85A
- Lead Free :
- Lead Free
- FET Type :
- N-Channel
- Current - Continuous Drain (Id) @ 25°C :
- 1.85A Tc
- Pulsed Drain Current-Max (IDM) :
- 7.4A
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs(th) (Max) @ Id :
- 4.5V @ 50μA
- Base Part Number :
- STP2N
- Length :
- 10.4mm
- Input Capacitance (Ciss) (Max) @ Vds :
- 499pF @ 25V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Element Configuration :
- Single
- Drain Current-Max (Abs) (ID) :
- 2A
- Power Dissipation-Max :
- 70W Tc
- Gate to Source Voltage (Vgs) :
- 30V
- Rds On (Max) @ Id, Vgs :
- 8.5 Ω @ 900mA, 10V
- Turn On Delay Time :
- 7.2 ns
- Width :
- 4.6mm
- Number of Pins :
- 3
- Number of Elements :
- 1
- REACH SVHC :
- No SVHC
- Drain to Source Voltage (Vdss) :
- 1000V
- Power Dissipation :
- 70W
- Gate Charge (Qg) (Max) @ Vgs :
- 16nC @ 10V
- Number of Terminations :
- 3
- Transistor Element Material :
- SILICON
- Threshold Voltage :
- 3.75V
- ECCN Code :
- EAR99
- Package / Case :
- TO-220-3
- Packaging :
- Tube
- RoHS Status :
- ROHS3 Compliant
- Vgs (Max) :
- ±30V
- Turn-Off Delay Time :
- 41.5 ns
- Datasheets
- STP2NK100Z

N-Channel Tube 8.5 Ω @ 900mA, 10V ±30V 499pF @ 25V 16nC @ 10V 1000V TO-220-3
STP2NK100Z Description
STP2NK100Z are Zener-protected N-channel Power MOSFETs developed by STMicroelectronics using SuperMESHTM technology. STP2NK100Z is an improved version of the well-known PowerMESHTM. STP2NK100Z MOSFETs are developed to ensure a high degree of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
STP2NK100Z Features
-
Zener-protected
-
100% avalanche tested
-
Gate charge minimized
-
Extremely high dv/dt capability
-
Very low intrinsic capacitance
STP2NK100Z Applications
-
Switching applications
-
Multichannel LED Drivers, Bulb Drivers
-
Multichannel High-Side Switches for Sub-Modules
-
Multichannel High-Side Relay, Solenoid Drivers
-
PLC Digital Output Drivers
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