STP2N95K5

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Mfr.Part #
STP2N95K5
Manufacturer
STMicroelectronics
Package / Case
TO-220-3
Datasheet
Download
Description
MOSFET N-CH 950V 2A TO220
Stock
3,427
In Stock :
3,427

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Manufacturer :
STMicroelectronics
Product Category :
Transistors - FETs, MOSFETs - Single
Mount :
Through Hole
Factory Lead Time :
17 Weeks
Drain-source On Resistance-Max :
5Ohm
Width :
4.6mm
Base Part Number :
STP2N
Fall Time (Typ) :
32.5 ns
Drain to Source Voltage (Vdss) :
950V
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Rds On (Max) @ Id, Vgs :
5 Ω @ 1A, 10V
Operating Temperature :
-55°C~150°C TJ
Drain Current-Max (Abs) (ID) :
2A
Length :
10.4mm
Package / Case :
TO-220-3
Moisture Sensitivity Level (MSL) :
1 (Unlimited)
Continuous Drain Current (ID) :
2A
Drive Voltage (Max Rds On,Min Rds On) :
10V
FET Type :
N-Channel
Current - Continuous Drain (Id) @ 25°C :
2A Tc
Operating Mode :
ENHANCEMENT MODE
Lead Free :
Lead Free
Number of Elements :
1
Series :
SuperMESH5™
Number of Channels :
1
Input Capacitance (Ciss) (Max) @ Vds :
105pF @ 100V
Weight :
329.988449mg
Gate to Source Voltage (Vgs) :
30V
ECCN Code :
EAR99
JEDEC-95 Code :
TO-220AB
Power Dissipation-Max :
45W Tc
Vgs(th) (Max) @ Id :
5V @ 100µA
Height :
15.75mm
DS Breakdown Voltage-Min :
950V
Number of Pins :
3
Packaging :
Tube
Mounting Type :
Through Hole
RoHS Status :
ROHS3 Compliant
Rise Time :
13.5ns
Transistor Application :
SWITCHING
Transistor Element Material :
SILICON
Turn-Off Delay Time :
20.5 ns
Avalanche Energy Rating (Eas) :
50 mJ
Pulsed Drain Current-Max (IDM) :
8A
Number of Terminations :
3
Element Configuration :
Single
Radiation Hardening :
No
Turn On Delay Time :
8.5 ns
Lifecycle Status :
ACTIVE (Last Updated: 8 months ago)
Datasheets
STP2N95K5
Introducing Transistors - FETs, MOSFETs - Single STMicroelectronics STP2N95K5 from Chip IC,where excellence meets affordability. This product stands out with its Base Part Number:STP2N, Operating Temperature:-55°C~150°C TJ, Package / Case:TO-220-3, Number of Channels:1, Number of Pins:3, Mounting Type:Through Hole, Number of Terminations:3, STP2N95K5 pinout, STP2N95K5 datasheet PDF, STP2N95K5 amp .Beyond Transistors - FETs, MOSFETs - Single STMicroelectronics STP2N95K5 ,we also offer EPC2019, EPC2053, EPC2015C, Our vast inventory has you covered. Contact us now for immediate solutions.

STMicroelectronics STP2N95K5


N-Channel Tube 5 Ω @ 1A, 10V 105pF @ 100V 10nC @ 10V 950V TO-220-3

STP2N95K5 Overview


When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 50 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 105pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 2A. The drain current is the maximum continuous current the device can conduct, and the drain current of this device is 2A.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20.5 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 8A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 8.5 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Single MOSFETs transistor is recommended that the DS breakdown voltage be kept above 950V in order to maintain normal operation.Operating this transistor requires a 950V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP2N95K5 Features


the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 2A
the turn-off delay time is 20.5 ns
based on its rated peak drain current 8A.
a 950V drain to source voltage (Vdss)


STP2N95K5 Applications


There are a lot of STMicroelectronics
STP2N95K5 applications of single MOSFETs transistors.


  • LCD/LED TV
  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
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