STP2N80K5
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- Mfr.Part #
- STP2N80K5
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 800V 2A TO220
- Stock
- 18,192
- In Stock ：
- 18,192
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Input Capacitance (Ciss) (Max) @ Vds :
- 95pF @ 100V
- Number of Pins :
- 3
- Weight :
- 329.988449mg
- Packaging :
- Tube
- Height :
- 15.75mm
- Package / Case :
- TO-220-3
- Turn On Delay Time :
- 8 ns
- ECCN Code :
- EAR99
- Radiation Hardening :
- No
- Power Dissipation-Max :
- 45W Tc
- Lifecycle Status :
- ACTIVE (Last Updated: 7 months ago)
- Continuous Drain Current (ID) :
- 2A
- Rds On (Max) @ Id, Vgs :
- 4.5 Ω @ 1A, 10V
- FET Type :
- N-Channel
- Series :
- SuperMESH5™
- Number of Elements :
- 1
- Mount :
- Through Hole
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Turn-Off Delay Time :
- 19 ns
- Operating Mode :
- ENHANCEMENT MODE
- Number of Terminations :
- 3
- Vgs(th) (Max) @ Id :
- 5V @ 100µA
- Gate to Source Voltage (Vgs) :
- 30V
- Transistor Application :
- SWITCHING
- Element Configuration :
- Single
- Drain to Source Breakdown Voltage :
- 800V
- Avalanche Energy Rating (Eas) :
- 60.5 mJ
- Current - Continuous Drain (Id) @ 25°C :
- 2A Tc
- Mounting Type :
- Through Hole
- Factory Lead Time :
- 17 Weeks
- Drain Current-Max (Abs) (ID) :
- 2A
- Pulsed Drain Current-Max (IDM) :
- 8A
- Gate Charge (Qg) (Max) @ Vgs :
- 3nC @ 10V
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- RoHS Status :
- ROHS3 Compliant
- Width :
- 4.6mm
- Number of Channels :
- 1
- Transistor Element Material :
- SILICON
- Operating Temperature :
- -55°C~150°C TJ
- Base Part Number :
- STP2N
- Lead Free :
- Lead Free
- Length :
- 10.4mm
- JEDEC-95 Code :
- TO-220AB
- Datasheets
- STP2N80K5
N-Channel Tube 4.5 Ω @ 1A, 10V 95pF @ 100V 3nC @ 10V TO-220-3
STP2N80K5 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 60.5 mJ.A device's maximum input capacitance is 95pF @ 100V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 2A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 19 ns.Its maximum pulsed drain current is 8A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP2N80K5 Features
the avalanche energy rating (Eas) is 60.5 mJ
a continuous drain current (ID) of 2A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 19 ns
based on its rated peak drain current 8A.
STP2N80K5 Applications
There are a lot of STMicroelectronics
STP2N80K5 applications of single MOSFETs transistors.
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
- PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
- Lighting, Server, Telecom and UPS.
- DC-to-DC converters
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