STP28NM60ND
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- Mfr.Part #
- STP28NM60ND
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 23A TO220
- Stock
- 7,718
- In Stock ：
- 7,718
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Avalanche Energy Rating (Eas) :
- 50 mJ
- Transistor Application :
- SWITCHING
- Fall Time (Typ) :
- 27 ns
- Pulsed Drain Current-Max (IDM) :
- 92A
- Lead Free :
- Lead Free
- Turn-Off Delay Time :
- 92 ns
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Drain to Source Breakdown Voltage :
- 650V
- Number of Pins :
- 3
- Weight :
- 329.988449mg
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Power Dissipation-Max :
- 190W Tc
- RoHS Status :
- ROHS3 Compliant
- Operating Temperature :
- 150°C TJ
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Gate Charge (Qg) (Max) @ Vgs :
- 62.5nC @ 10V
- Gate to Source Voltage (Vgs) :
- 25V
- Width :
- 4.6mm
- Transistor Element Material :
- SILICON
- Factory Lead Time :
- 16 Weeks
- Number of Channels :
- 1
- Case Connection :
- DRAIN
- Number of Elements :
- 1
- Rise Time :
- 21.5ns
- Length :
- 10.4mm
- Drain to Source Voltage (Vdss) :
- 600V
- FET Type :
- N-Channel
- Packaging :
- Tube
- Mounting Type :
- Through Hole
- Current - Continuous Drain (Id) @ 25°C :
- 23A Tc
- Height :
- 15.75mm
- Element Configuration :
- Single
- Base Part Number :
- STP28N
- Package / Case :
- TO-220-3
- Vgs (Max) :
- ±25V
- Radiation Hardening :
- No
- Rds On (Max) @ Id, Vgs :
- 150m Ω @ 11.5A, 10V
- JEDEC-95 Code :
- TO-220AB
- ECCN Code :
- EAR99
- Series :
- FDmesh™ II
- Continuous Drain Current (ID) :
- 23A
- Operating Mode :
- ENHANCEMENT MODE
- Mount :
- Through Hole
- Input Capacitance (Ciss) (Max) @ Vds :
- 2090pF @ 100V
- Turn On Delay Time :
- 23.5 ns
- Number of Terminations :
- 3
- Datasheets
- STP28NM60ND
N-Channel Tube 150m Ω @ 11.5A, 10V ±25V 2090pF @ 100V 62.5nC @ 10V 600V TO-220-3
STP28NM60ND Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 50 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2090pF @ 100V.This device conducts a continuous drain current (ID) of 23A, which is the maximum continuous current transistor can conduct.Using VGS=650V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 650V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 92 ns occurs as the input capacitance charges before drain current conduction commences.Pulsed drain current is maximum rated peak drain current 92A.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 23.5 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 25V.This transistor requires a drain-source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP28NM60ND Features
the avalanche energy rating (Eas) is 50 mJ
a continuous drain current (ID) of 23A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 92 ns
based on its rated peak drain current 92A.
a 600V drain to source voltage (Vdss)
STP28NM60ND Applications
There are a lot of STMicroelectronics
STP28NM60ND applications of single MOSFETs transistors.
- Motor drives and Uninterruptible Power Supplies
- Micro Solar Inverter
- DC/DC converters
- Power Tools
- Motor Drives and Uninterruptible Power Supples
- Synchronous Rectification
- Battery Protection Circuit
- Telecom 1 Sever Power Supplies
- Industrial Power Supplies
- PFC stages, hard switching PWM stages and resonant switching
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