STP28NM50N

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Resistance :

158mOhm

FET Type :

N-Channel

Width :

4.6mm

Rds On (Max) @ Id, Vgs :

158m Ω @ 10.5A, 10V

JESD-609 Code :

e3

Drive Voltage (Max Rds On,Min Rds On) :

10V

Mounting Type :

Through Hole

Vgs (Max) :

±25V

Number of Terminations :

3

Transistor Application :

SWITCHING

Drain to Source Breakdown Voltage :

500V

JEDEC-95 Code :

TO-220AB

Gate Charge (Qg) (Max) @ Vgs :

50nC @ 10V

Gate to Source Voltage (Vgs) :

25V

Series :

MDmesh™ II

Pulsed Drain Current-Max (IDM) :

84A

Element Configuration :

Single

Threshold Voltage :

3V

Input Capacitance (Ciss) (Max) @ Vds :

1735pF @ 25V

REACH SVHC :

No SVHC

Package / Case :

TO-220-3

Radiation Hardening :

No

Operating Mode :

ENHANCEMENT MODE

Continuous Drain Current (ID) :

21A

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Transistor Element Material :

SILICON

Length :

10.4mm

Base Part Number :

STP28N

Height :

15.75mm

ECCN Code :

EAR99

Turn-Off Delay Time :

62 ns

Vgs(th) (Max) @ Id :

4V @ 250µA

Mount :

Through Hole

Rise Time :

19ns

Power Dissipation-Max :

150W Tc

Turn On Delay Time :

13.6 ns

Pin Count :

3

Number of Pins :

3

Power Dissipation :

90W

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Number of Elements :

1

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Terminal Finish :

Tin (Sn)

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Lead Free :

Lead Free

Factory Lead Time :

16 Weeks

Operating Temperature :

150°C TJ

Fall Time (Typ) :

52 ns