STP28N60DM2
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- Mfr.Part #
- STP28N60DM2
- Manufacturer
- STMicroelectronics
- Package / Case
- TO-220-3
- Datasheet
- Download
- Description
- MOSFET N-CH 600V 21A TO220
- Stock
- 5,952
- In Stock ：
- 5,952
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- Manufacturer :
- STMicroelectronics
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Factory Lead Time :
- 17 Weeks
- Operating Temperature :
- -55°C~150°C TJ
- RoHS Status :
- ROHS3 Compliant
- Package / Case :
- TO-220-3
- Mount :
- Through Hole
- REACH SVHC :
- No SVHC
- Gate Charge (Qg) (Max) @ Vgs :
- 34nC @ 10V
- Lifecycle Status :
- ACTIVE (Last Updated: 8 months ago)
- Vgs (Max) :
- ±25V
- ECCN Code :
- EAR99
- Power Dissipation-Max :
- 170W Tc
- Moisture Sensitivity Level (MSL) :
- 1 (Unlimited)
- Input Capacitance (Ciss) (Max) @ Vds :
- 1500pF @ 100V
- Vgs(th) (Max) @ Id :
- 5V @ 250μA
- Base Part Number :
- STP28N
- Continuous Drain Current (ID) :
- 21A
- Current - Continuous Drain (Id) @ 25°C :
- 21A Tc
- Time@Peak Reflow Temperature-Max (s) :
- NOT SPECIFIED
- Series :
- MDmesh™ DM2
- Rds On (Max) @ Id, Vgs :
- 160m Ω @ 10.5A, 10V
- Number of Pins :
- 3
- Threshold Voltage :
- 4V
- FET Type :
- N-Channel
- Mounting Type :
- Through Hole
- Peak Reflow Temperature (Cel) :
- NOT SPECIFIED
- Packaging :
- Tube
- Drain to Source Voltage (Vdss) :
- 600V
- Drive Voltage (Max Rds On,Min Rds On) :
- 10V
- Datasheets
- STP28N60DM2
N-Channel Tube 160m Ω @ 10.5A, 10V ±25V 1500pF @ 100V 34nC @ 10V 600V TO-220-3
STP28N60DM2 Description
These high voltage N-channel power MOSFET STP28N60DM2 are part of the family of MDMesh DM2 fast recovery diodes. With extremely low recovery charge (QRR) and recovery time (TRR) and low RDS (conduction), they are ideal for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase shifters.
STP28N60DM2 Features
· Fast-recovery body diode
· Extremely low gate charge and input capacitance
· Low on-resistance
· 100% avalanche tested
· Extremely high dv/dt ruggedness
· Zener-protected
STP28N60DM2 Applications
· Switching applications
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