STP27N3LH5

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Transistor Element Material :

SILICON

JESD-609 Code :

e3

Number of Terminations :

3

Number of Elements :

1

Power Dissipation-Max :

45W Tc

Rds On (Max) @ Id, Vgs :

20m Ω @ 13.5A, 10V

JESD-30 Code :

R-PSFM-T3

Resistance :

20mOhm

Mounting Type :

Through Hole

Turn On Delay Time :

4 ns

Gate to Source Voltage (Vgs) :

22V

Vgs(th) (Max) @ Id :

2.5V @ 250μA

FET Type :

N-Channel

Drive Voltage (Max Rds On,Min Rds On) :

4.5V 10V

Drain to Source Breakdown Voltage :

30V

Base Part Number :

STP27N

Avalanche Energy Rating (Eas) :

50 mJ

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Element Configuration :

Single

Rise Time :

22ns

Series :

STripFET™ V

Input Capacitance (Ciss) (Max) @ Vds :

475pF @ 25V

Power Dissipation :

30W

RoHS Status :

ROHS3 Compliant

Turn-Off Delay Time :

13 ns

Peak Reflow Temperature (Cel) :

NOT SPECIFIED

Lead Free :

Lead Free

ECCN Code :

EAR99

Case Connection :

DRAIN

Pin Count :

3

Vgs (Max) :

±22V

Transistor Application :

SWITCHING

Packaging :

Tube

Package / Case :

TO-220-3

Continuous Drain Current (ID) :

27A

Operating Temperature :

-55°C~175°C TJ

JEDEC-95 Code :

TO-220AB

Fall Time (Typ) :

2.8 ns

Time@Peak Reflow Temperature-Max (s) :

NOT SPECIFIED

Gate Charge (Qg) (Max) @ Vgs :

4.6nC @ 5V

Current - Continuous Drain (Id) @ 25°C :

27A Tc

Operating Mode :

ENHANCEMENT MODE

Terminal Finish :

Matte Tin (Sn) - annealed

Qualification Status :

Not Qualified

Mount :

Through Hole