STP270N4F3

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Drain to Source Breakdown Voltage :

40V

Gate Charge (Qg) (Max) @ Vgs :

150nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

7400pF @ 25V

Continuous Drain Current (ID) :

120A

Gate to Source Voltage (Vgs) :

20V

Mounting Type :

Through Hole

Drive Voltage (Max Rds On,Min Rds On) :

10V

Power Dissipation :

330W

Vgs(th) (Max) @ Id :

4V @ 250µA

Number of Terminations :

3

Base Part Number :

STP270

Power Dissipation-Max :

330W Tc

Case Connection :

DRAIN

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Pulsed Drain Current-Max (IDM) :

480A

JEDEC-95 Code :

TO-220AB

Rds On (Max) @ Id, Vgs :

2.9m Ω @ 80A, 10V

Fall Time (Typ) :

45 ns

Number of Elements :

1

Turn On Delay Time :

22 ns

Current - Continuous Drain (Id) @ 25°C :

120A Tc

Mount :

Through Hole

Element Configuration :

Single

Radiation Hardening :

No

Operating Temperature :

-55°C~175°C TJ

Packaging :

Tube

Avalanche Energy Rating (Eas) :

1000 mJ

Transistor Application :

SWITCHING

Package / Case :

TO-220-3

Drain-source On Resistance-Max :

0.0029Ohm

FET Type :

N-Channel

Number of Pins :

3

Operating Mode :

ENHANCEMENT MODE

RoHS Status :

ROHS3 Compliant

Series :

STripFET™ III

Pin Count :

3

ECCN Code :

EAR99

Rise Time :

180ns

Transistor Element Material :

SILICON

Turn-Off Delay Time :

110 ns

Vgs (Max) :

±20V