STP26NM60ND

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

21A

Transistor Element Material :

SILICON

Radiation Hardening :

No

Vgs (Max) :

±25V

RoHS Status :

ROHS3 Compliant

Packaging :

Tube

Lead Free :

Lead Free

Width :

4.6mm

Drive Voltage (Max Rds On,Min Rds On) :

10V

Operating Temperature :

150°C TJ

Input Capacitance (Ciss) (Max) @ Vds :

1817pF @ 100V

FET Type :

N-Channel

JEDEC-95 Code :

TO-220AB

Rise Time :

14.5ns

Gate to Source Voltage (Vgs) :

25V

Turn-Off Delay Time :

69 ns

Height :

15.75mm

Number of Pins :

3

Package / Case :

TO-220-3

Number of Channels :

1

Moisture Sensitivity Level (MSL) :

Not Applicable

Gate Charge (Qg) (Max) @ Vgs :

54.6nC @ 10V

Series :

FDmesh™ II

ECCN Code :

EAR99

Pulsed Drain Current-Max (IDM) :

84A

Mounting Type :

Through Hole

Mount :

Through Hole

Element Configuration :

Single

Length :

10.4mm

Number of Terminations :

3

Number of Elements :

1

Weight :

329.988449mg

Power Dissipation-Max :

190W Tc

DS Breakdown Voltage-Min :

600V

Turn On Delay Time :

22 ns

Rds On (Max) @ Id, Vgs :

175m Ω @ 10.5A, 10V

Operating Mode :

ENHANCEMENT MODE

Transistor Application :

SWITCHING

Drain to Source Voltage (Vdss) :

600V

Power Dissipation :

190W

Vgs(th) (Max) @ Id :

5V @ 250μA

Current - Continuous Drain (Id) @ 25°C :

21A Tc

Case Connection :

DRAIN

Base Part Number :

STP26N

Fall Time (Typ) :

27.5 ns