STP260N6F6

Manufacturer :

STMicroelectronics

Product Category :

Transistors - FETs, MOSFETs - Single

Continuous Drain Current (ID) :

120A

Series :

DeepGATE™, STripFET™ VI

Mount :

Through Hole

Factory Lead Time :

20 Weeks

Power Dissipation :

300W

Pulsed Drain Current-Max (IDM) :

480A

Input Capacitance (Ciss) (Max) @ Vds :

11400pF @ 25V

Lead Free :

Lead Free

Gate Charge (Qg) (Max) @ Vgs :

183nC @ 10V

Moisture Sensitivity Level (MSL) :

1 (Unlimited)

Operating Temperature :

-55°C~175°C TJ

Package / Case :

TO-220-3

Operating Mode :

ENHANCEMENT MODE

Radiation Hardening :

No

JEDEC-95 Code :

TO-220AB

Number of Pins :

3

Current - Continuous Drain (Id) @ 25°C :

120A Tc

RoHS Status :

ROHS3 Compliant

Threshold Voltage :

2V

Number of Elements :

1

Lifecycle Status :

ACTIVE (Last Updated: 7 months ago)

Drain to Source Breakdown Voltage :

75V

Base Part Number :

STP260

Rds On (Max) @ Id, Vgs :

3m Ω @ 60A, 10V

Gate to Source Voltage (Vgs) :

20V

Turn-Off Delay Time :

144.4 ns

Length :

10.4mm

Transistor Element Material :

SILICON

Transistor Application :

SWITCHING

REACH SVHC :

No SVHC

Turn On Delay Time :

31.4 ns

ECCN Code :

EAR99

Pin Count :

3

Mounting Type :

Through Hole

Element Configuration :

Single

Fall Time (Typ) :

62.6 ns

Number of Terminations :

3

FET Type :

N-Channel

Power Dissipation-Max :

300W Tc

Vgs (Max) :

±20V

Packaging :

Tube

Height :

15.75mm

Vgs(th) (Max) @ Id :

4V @ 250µA

Rise Time :

165ns

Drain to Source Voltage (Vdss) :

60V

Width :

4.6mm

Resistance :

3mOhm

Drive Voltage (Max Rds On,Min Rds On) :

10V